×
验证码:
换一张
Forgotten Password?
Stay signed in
×
Log In
Chinese
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
Log In
Register
ALL
ORCID
Title
Creator
Subject Area
Keyword
Document Type
Source Publication
Indexed By
Publisher
Date Issued
Date Accessioned
Funding Project
MOST Discipline Catalogue
Study Hall
Image search
Paste the image URL
Home
Collections
Authors
DocType
Subjects
K-Map
News
Search in the results
Collection
中国科学院半导体研... [61]
集成光电子学国家重... [23]
光电子研究发展中心 [23]
Authors
朱建军 [59]
张书明 [53]
赵德刚 [51]
江德生 [39]
王玉田 [20]
朱继红 [5]
More...
Document Type
Journal a... [68]
Patent [38]
Thesis [1]
Date Issued
2013 [1]
2012 [1]
2011 [4]
2010 [11]
2009 [15]
2008 [10]
More...
Language
英语 [43]
中文 [39]
Source Publication
半导体学报 [12]
JOURNAL OF... [5]
物理学报 [5]
APPLIED PH... [4]
JOURNAL OF... [4]
CHINESE PH... [3]
More...
Funding Project
Indexed By
SCI [39]
CSCD [26]
Funding Organization
国家自然科学基金 [6]
国家高技术研究发展计... [4]
863计划资助项目 [1]
National B... [1]
National N... [1]
National N... [1]
More...
×
Knowledge Map
SEMI OpenIR
Start a Submission
Submissions
Unclaimed
Claimed
Attach Fulltext
Bookmarks
QQ
Weibo
Feedback
Browse/Search Results:
1-10 of 107
Help
Show only claimed items
Selected(
0
)
Clear
Items/Page:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Sort:
Select
Submit date Ascending
Submit date Descending
Author Ascending
Author Descending
Journal Impact Factor Ascending
Journal Impact Factor Descending
WOS Cited Times Ascending
WOS Cited Times Descending
Title Ascending
Title Descending
Issue Date Ascending
Issue Date Descending
Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 页码: 7-10
Authors:
Zhou, Kun
;
Liu, Jianping
;
Zhang, Shuming
;
Li, Zengcheng
;
Feng, Meixin
;
Li, Deyao
;
Zhang, Liqun
;
Wang, Feng
;
Zhu, Jianjun
;
Yang, Hui
Adobe PDF(739Kb)
  |  
Favorite
  |  
View/Download:887/289
  |  
Submit date:2013/08/27
Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique
期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 9, 页码: 091001
Authors:
Lu LW (Lu, Liwu)
;
Su SC (Su, Shichen)
;
Ling CC (Ling, Chi-Chung)
;
Xu SJ (Xu, Shijie)
;
Zhao DG (Zhao, Degang)
;
Zhu JJ (Zhu, Jianjun)
;
Yang H (Yang, Hui)
;
Wang JN (Wang, Jiannong)
;
Gey WK (Gey, Weikun)
Adobe PDF(449Kb)
  |  
Favorite
  |  
View/Download:1051/290
  |  
Submit date:2013/04/02
纳米折叠InGaN/GaN LED材料生长及器件特性
期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:
陈贵锋
;
谭小动
;
万尾甜
;
沈俊
;
郝秋艳
;
唐成春
;
朱建军
;
刘宗顺
;
赵德刚
;
张书明
Adobe PDF(762Kb)
  |  
Favorite
  |  
View/Download:1248/511
  |  
Submit date:2012/07/17
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:
Deng Y
;
Zhao DG
;
Le LC
;
Jiang DS
;
Wu LL
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Yang H
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(311Kb)
  |  
Favorite
  |  
View/Download:1709/520
  |  
Submit date:2011/07/05
Nitride Materials
Crystal Growth
Composition Fluctuations
X-ray Diffraction
Layer
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:
Zhu JH
;
Wang LJ
;
Zhang SM
;
Wang H
;
Zhao DG
;
Zhu JJ
;
Liu ZS
;
Jiang DS
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Adobe PDF(1530Kb)
  |  
Favorite
  |  
View/Download:1594/524
  |  
Submit date:2011/07/05
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:
Zhu JH
;
Zhang SM
;
Wang H
;
Zhao DG
;
Zhu JJ
;
Liu ZS
;
Jiang DS
;
Qiu YX
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Adobe PDF(1688Kb)
  |  
Favorite
  |  
View/Download:1611/448
  |  
Submit date:2011/07/05
Diodes
Efficiency
氮化镓基多波段探测器及其制作方法
专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:
刘文宝
;
孙 苋
;
赵德刚
;
刘宗顺
;
张书明
;
朱建军
;
杨 辉
Adobe PDF(603Kb)
  |  
Favorite
  |  
View/Download:1272/279
  |  
Submit date:2010/08/12
利用光辅助氧化湿法刻蚀Ⅲ族氮化物的方法
专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:
刘文宝
;
孙 苋
;
赵德刚
;
刘宗顺
;
张书明
;
朱建军
;
杨 辉
Adobe PDF(597Kb)
  |  
Favorite
  |  
View/Download:1199/271
  |  
Submit date:2010/08/12
一种生长纳米折叠结构有源区外延片的方法
专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2009-12-02, 2010-08-12
Inventors:
朱建军
Adobe PDF(827Kb)
  |  
Favorite
  |  
View/Download:1142/254
  |  
Submit date:2010/08/12
The fabrication of GaN-based nanopillar light-emitting diodes
期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 074302
Authors:
Zhu JH (Zhu Jihong)
;
Wang LJ (Wang Liangji)
;
Zhang SM (Zhang Shuming)
;
Wang H (Wang Hui)
;
Zhao DG (Zhao Degang)
;
Zhu JJ (Zhu Jianjun)
;
Liu ZS (Liu Zongshun)
;
Jiang DS (Jiang Desheng)
;
Yang H (Yang Hui)
;
Zhu, JH, Chinese AcadSci, State Key Lab Integrated Optoelect, InstSemicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
Adobe PDF(536Kb)
  |  
Favorite
  |  
View/Download:1476/463
  |  
Submit date:2010/11/14
Masks
Ni