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Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 页码: 7-10
Authors:  Zhou, Kun;  Liu, Jianping;  Zhang, Shuming;  Li, Zengcheng;  Feng, Meixin;  Li, Deyao;  Zhang, Liqun;  Wang, Feng;  Zhu, Jianjun;  Yang, Hui
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Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique 期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 9, 页码: 091001
Authors:  Lu LW (Lu, Liwu);  Su SC (Su, Shichen);  Ling CC (Ling, Chi-Chung);  Xu SJ (Xu, Shijie);  Zhao DG (Zhao, Degang);  Zhu JJ (Zhu, Jianjun);  Yang H (Yang, Hui);  Wang JN (Wang, Jiannong);  Gey WK (Gey, Weikun)
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纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:  Zhu JH;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Qiu YX;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Adobe PDF(1688Kb)  |  Favorite  |  View/Download:1472/448  |  Submit date:2011/07/05
Diodes  Efficiency  
氮化镓基多波段探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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利用光辅助氧化湿法刻蚀Ⅲ族氮化物的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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一种生长纳米折叠结构有源区外延片的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2009-12-02, 2010-08-12
Inventors:  朱建军
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The fabrication of GaN-based nanopillar light-emitting diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 074302
Authors:  Zhu JH (Zhu Jihong);  Wang LJ (Wang Liangji);  Zhang SM (Zhang Shuming);  Wang H (Wang Hui);  Zhao DG (Zhao Degang);  Zhu JJ (Zhu Jianjun);  Liu ZS (Liu Zongshun);  Jiang DS (Jiang Desheng);  Yang H (Yang Hui);  Zhu, JH, Chinese AcadSci, State Key Lab Integrated Optoelect, InstSemicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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