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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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An ambient proof and wide tuning range LC VCO with automatic amplitude control for tuner applications
会议论文
2006 INTERNATIONAL CONFERENCE ON COMMUNICATIONS CIRCUITS AND SYSTEMS PROCEEDINGS VOLS 丛书标题: International Conference on Communications, Circuits and Systems, Guilin, PEOPLES R CHINA, JUN 25-28, 2006
作者:
Yan, J (Yan, Jun)
;
Ma, DS (Ma, Desheng)
;
Mao, W (Mao, Wei)
;
Gu, M (Gu, Ming)
;
Shi, Y (Shi, Yin)
;
Dai, FF (Dai, Fa Foster)
;
Yan, J, Chinese Acad Sci, Inst Semicond, Mixed Signal & High Speed Circuit Lab, Beijing 100083, Peoples R China.
Adobe PDF(3739Kb)
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浏览/下载:1403/264
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提交时间:2010/03/29
Conversion
Oscillators
Noise
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Jiang DS
;
Bian LF
;
Liang XG
;
Chang K
;
Sun BQ
;
Johnson S
;
Zhang YH
;
Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)
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浏览/下载:1494/405
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Gaassb/gaas
Gaas
Lasers
Gain
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 6 (5-6), Sendai, JAPAN, MAR 20-22, 2003
作者:
Leung BH
;
Fong WK
;
Surya C
;
Lu LW
;
Ge WK
;
Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
Adobe PDF(191Kb)
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浏览/下载:1352/281
  |  
提交时间:2010/10/29
Gan
Low-frequency Noise
Deep Levels
Deep Level Transient Fourier Spectroscopy
Devices
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)
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浏览/下载:1707/419
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提交时间:2010/11/15
Annealing
Molecular Beam Epitaxy
Germanium Silicon Alloys
Semiconducting Materials
Strain Relaxation
In situ annealing during the growth of relaxed SiGe
会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:
Li DZ
;
Huang CJ
;
Cheng BW
;
Wang HJ
;
Yu Z
;
Zhang CH
;
Yu JZ
;
Wang QM
;
Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)
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浏览/下载:1142/204
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提交时间:2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition
Sige
Refractive High Energy Electron Diffraction
Tansmission Electron Microscopy
Double Crystal X-ray Diffraction
Mobility 2-dimensional Electron
Critical Thickness
Strained Layers
Ge
Relaxation
Epilayers
Si1-xgex
Gesi/si
Gases
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 72 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Wang QY
;
Nie JP
;
Yu F
;
Liu ZL
;
Yu YH
;
Wang QY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(121Kb)
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浏览/下载:1289/267
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提交时间:2010/11/15
Solid Phase Epitaxy
SilicOn On Sapphire (Sos)
Carrier Mobility
Electronic characteristics of InAs self-assembled quantum dots
会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 7 (3-4), FUKUOKA, JAPAN, JUL 12-16, 1999
作者:
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
;
Wang HL Qufu Normal Univ Dept Phys Qufu 273165 Peoples R China.
Adobe PDF(105Kb)
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  |  
浏览/下载:1122/237
  |  
提交时间:2010/11/15
Inas/gaas Quantum Dots
Self-assembled Structure
Dlts
Pl
Band Offset
Energy-levels
Carrier Relaxation
Spectroscopy
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
;
Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(448Kb)
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  |  
浏览/下载:985/186
  |  
提交时间:2010/11/15
Electronic-structure
Carrier Relaxation
Energy-levels
Spectroscopy
Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing
会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:
Mo QW
;
Fan TW
;
Gong Q
;
Wu J
;
Wang ZG
;
Bai YQ
;
Zhang W
;
Mo QW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(201Kb)
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  |  
浏览/下载:1388/316
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Coherent Islands
Gaas
Growth
Dots
Dislocations
Temperature
Mechanisms
Si(001)
Ingaas