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应用BIGIS-4测序系统完成Glaciecola mesophila sp.nov.的全基因组测序和组装 期刊论文
中国科学. 生命科学, 2011, 卷号: 41, 期号: 7, 页码: 544-549
Authors:  袁丽娜;  任鲁风;  李运涛;  韩伟静;  俞勇;  楚亚男;  刘贵明;  于丹;  滕明静;  王亮;  王绪敏;  周晓光;  俞育德;  于军
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Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 3, 页码: 548-551
Authors:  Bian LF;  Jiang D;  Liang XG;  Lu SL;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lfbian@red.semi.ac.cn
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Molecular-beam Epitaxy  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 3-4, 页码: 336-341
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang, DS, CAS, Inst Semicond, SKLSM, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
GaInNAs/GaAs等窄带隙量子阱结构光学性质的研究 学位论文
, 北京: 中国科学院半导体研究所, 2002
Authors:  梁晓甘
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The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
Authors:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Luminescence  Localization  
Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 8, 页码: 1203-1206
Authors:  Liang XG;  Jiang DS;  Bian LF;  Pan Z;  Li LH;  Wu RH;  Liang XG,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Band  Luminescence  Gaas  Localization  Emission  Behavior  Shift  Ingan  
GaInNAs/GaAs量子阱的光致发光谱和光调制反射谱 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 12, 页码: 1281-1285
Authors:  梁晓甘;  江德生;  边历峰;  潘钟;  李联合;  吴荣汉
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The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 2, 页码: 261-266
Authors:  Liang XG;  Jiang DS;  Sun BQ;  Bian LF;  Pan Z;  Li LH;  Wu RH;  Liang XG,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Photoluminescence  Molecular Beam Epitaxy  Quantum Wells  Iii-v Semiconductors  Molecular-beam Epitaxy  Single-quantum-well  Luminescence  Gaas  Localization  Behavior  Layer  
Lasing of CdSexS1-x quantum dots in a glass spherical microcavity 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 卷号: 14, 期号: 25, 页码: 6395-6401
Authors:  Lu SL;  Jiang DS;  Jia R;  An L;  Bian LF;  Liang XG;  Ma BS;  Sun BQ;  Lu SL,Univ New S Wales,Dept Phys,Sydney,NSW,Australia.
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Laser  Photoluminescence