Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
	Leung BH; Fong WK; Surya C; Lu LW; Ge WK; Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
	2003
会议名称	1st International Symposium on Point Defect and Stoichiometry
会议录名称	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 6 (5-6)
页码	523-525
会议日期	MAR 20-22, 2003
会议地点	Sendai, JAPAN
出版地	THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
出版者	ELSEVIER SCI LTD
ISSN	1369-8001
部门归属	hong kong polytech univ, photon res ctr, dept elect & informat engn, hong kong, hong kong, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; hong kong univ sci & technol, dept phys, hong kong, hong kong, peoples r china
摘要	Metal-semiconductor-metal (MSM) structures were fabricated by RF-plasma-assisted MBE using different buffer layer structures. One type of buffer structure consists of an AlN high-temperature buffer layer (HTBL) and a GaN intermediate temperature buffer layer (ITBL), another buffer structure consists of just a single A IN HTBL. Systematic measurements in the flicker noise and deep level transient Fourier spectroscopy (DLTFS) measurements were used to characterize the defect properties in the films. Both the noise and DLTFS measurements indicate improved properties for devices fabricated with the use of ITBL and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (C) 2003 Elsevier Ltd. All rights reserved.
关键词	Gan Low-frequency Noise Deep Levels Deep Level Transient Fourier Spectroscopy Devices
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13601
专题	中国科学院半导体研究所（2009年前）
通讯作者	Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
推荐引用方式 GB/T 7714	Leung BH,Fong WK,Surya C,et al. Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers[C]. THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND:ELSEVIER SCI LTD,2003:523-525.

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