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Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 3-4, 页码: 336-341
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang, DS, CAS, Inst Semicond, SKLSM, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 20, 页码: 4149-4151
Authors:  Zheng XH;  Jiang DS;  Johnson S;  Zhang YH;  Zheng XH,Chinese Acad Sci,Inst Phys,POB 603,Beijing 100080,Peoples R China.
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1.3-mu-m Vcsels  Gaas  Superlattices  
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
Authors:  Jiang DS;  Liang XG;  Chang K;  Bian LF;  Sun BQ;  Wang JB;  Johnson S;  Zhang Y;  Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
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Lasers  Gain  Gaas