Electronic characteristics of InAs self-assembled quantum dots

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	Electronic characteristics of InAs self-assembled quantum dots
	Wang HL; Feng SL; Zhu HJ; Ning D; Chen F; Wang HL Qufu Normal Univ Dept Phys Qufu 273165 Peoples R China.
	2000
会议名称	9th International Conference on Modulated Semiconductor Structures (MSS9)
会议录名称	PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 7 (3-4)
页码	383-387
会议日期	JUL 12-16, 1999
会议地点	FUKUOKA, JAPAN
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	1386-9477
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.
关键词	Inas/gaas Quantum Dots Self-assembled Structure Dlts Pl Band Offset Energy-levels Carrier Relaxation Spectroscopy
学科领域	半导体物理
主办者	Japan Soc Appl Phys.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14985
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang HL Qufu Normal Univ Dept Phys Qufu 273165 Peoples R China.
推荐引用方式 GB/T 7714	Wang HL,Feng SL,Zhu HJ,et al. Electronic characteristics of InAs self-assembled quantum dots[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:383-387.

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