In situ annealing during the growth of relaxed SiGe

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	In situ annealing during the growth of relaxed SiGe
	Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM; Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
	2000
会议名称	Conference on Optical and Infrared Thin Films
会议录名称	OPTICAL AND INFRARED THIN FILMS, 4094
页码	93-99
会议日期	36739
会议地点	SAN DIEGO, CA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3739-5
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a little lower temperature to keep the surface smooth, which will provide the gliding dislocations a wider channel and less low energy nucleation sites on the surface. Therefore, the dislocation density may be reduced. However, the motion of the existing threading dislocations cannot retain equilibrium at lower temperature, strain will accumulate and be in favor of the nucleation of dislocation. In situ annealing was used to reduce the residual strain in the sample during the low-temperature growth of SiGe. A fully relaxed Si0.8Ge0.2 layer was obtained with the surface dislocation density of 3x10(5)cm(-2).
关键词	Ultrahigh Vacuum Chemical Vapor Deposition Sige Refractive High Energy Electron Diffraction Tansmission Electron Microscopy Double Crystal X-ray Diffraction Mobility 2-dimensional Electron Critical Thickness Strained Layers Ge Relaxation Epilayers Si1-xgex Gesi/si Gases
学科领域	光电子学
主办者	SPIE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13719
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Li DZ,Huang CJ,Cheng BW,et al. In situ annealing during the growth of relaxed SiGe[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:93-99.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
2887.pdf（1540KB）			限制开放	--	请求全文