Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy
	Wang QY; Nie JP; Yu F; Liu ZL; Yu YH; Wang QY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2000
会议名称	International Conference on Advanced Materials: Sympopsium M - Silicon-based Materials and Devices
会议录名称	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 72 (2-3)
页码	189-192
会议日期	JUN 13-18, 1999
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0921-5107
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.
关键词	Solid Phase Epitaxy SilicOn On Sapphire (Sos) Carrier Mobility
学科领域	半导体材料
主办者	IUMRS.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15005
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang QY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang QY,Nie JP,Yu F,et al. Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2000:189-192.

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