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Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 2, 页码: 23502
Authors:  Cui K;  Ma WQ;  Zhang YH;  Huang JL;  Wei Y;  Cao YL;  Jin Z;  Bian LF;  Ma, WQ (reprint author), Chinese Acad Sci, Lab Nanooptoelect, Inst Semicond, Qinghua E Rd A 35,POB 912, Beijing 100083, Peoples R China, wqma@semi.ac.cn
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Detector  
GaAs /AlGaAs多量子阱空间光调制器入射角度特性研究 期刊论文
光电子·激光, 2010, 卷号: 21, 期号: 5, 页码: 668-671
Authors:  黄寓洋;  刘惠春;  Wasileweski Z R;  Buchanan M;  Laframboise S R;  杨晨;  崔国新;  边历峰;  杨辉;  张耀辉
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Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 12, 页码: Art. No. 125314
Authors:  Jahn U;  Brandt O;  Luna E;  Sun X;  Wang H;  Jiang DS;  Bian LF;  Yang;  H;  Jahn, U, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址: ujahn@pdi-berlin.de
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Gan  Alloys  
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 48, 期号: 10, 页码: Art.No.100206
Authors:  Lu SL (Lu, Shulong);  Nosho H (Nosho, Hidetaka);  Tackeuchi A (Tackeuchi, Atsushi);  Bian LF (Bian, Lifeng);  Dong JR (Dong, Jianrong);  Niu ZC (Niu, Zhichuan);  Lu, SL, Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan. 电子邮箱地址: sllu2008@sinano.ac.cn
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Alloys  
Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition 期刊论文
CHINESE PHYSICS B, 2008, 卷号: 17, 期号: 11, 页码: 4300-4304
Authors:  Liang S;  Zhu HL;  Pan JQ;  Zhao LJ;  Wang LF;  Zhou F;  Shu HY;  Bian J;  An X;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: liangsong@red.semi.ac.cn
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Metal-organic Chemical Vapour Deposition  
Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 92, 期号: 5, 页码: Art. No. 051908
Authors:  Lu SL;  Bian LF;  Uesugi M;  Nosho H;  Tackeuchi A;  Niu ZC;  Lu, SL, Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan. 电子邮箱地址: sllu@waseda.jp
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Molecular-beam Epitaxy  
Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 2, 页码: 361-365
Authors:  Feng W;  Pan JQ;  Wang LF;  Bian J;  Wang BJ;  Zhou F;  An X;  Zhao LJ;  Zhu HL;  Wang W;  Feng, W, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wfeng@semi.ac.cn
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Bandgap Energy Control  
掺铒半导体材料的性质的研究 学位论文
, 北京: 中国科学院半导体研究所, 2007
Authors:  卞留芳
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Effect of growth conditions on the GaN thin film by sputtering deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 299, 期号: 2, 页码: 268-271
Authors:  Zhang CG;  Bian LF;  Chen WD;  Hsu CC;  Zhang, CG, Chinese Acad Sci, Inst Semicond, State Key Lab Surf Phys, Beijing 100083, Peoples R China. 电子邮箱地址: zhangcg@semi.ac.cn
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Phase Equilibria  
Photoluminescence from Er-doped Si-in-SiNx thin films 期刊论文
OPTICAL MATERIALS, 2007, 卷号: 29, 期号: 8, 页码: 1071-1074
Authors:  Bian LF;  Zhang CG;  Chen WD;  Hsu CC;  Ma LB;  Song R;  Cao ZX;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. 电子邮箱地址: guobian@semi.ac.cn
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Photoluminescence