中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共11条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Fang, CB;  Wang, XL;  Wang, JX;  Liu, C;  Wang, CM;  Hu, GX;  Li, JP;  Li, CJ;  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)  |  收藏  |  浏览/下载：1335/262  |  提交时间：2010/03/29
Thermally Stimulated Current  Gallium Nitride  Defects  
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li, Z (Li, Z.);  Li, CJ (Li, C. J.);  Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1298/373  |  提交时间：2010/03/29
Dlts  
Research on the band-gap of InN grown on siticon substrates 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Xiao, HL;  Wang, XL;  Wang, JX;  Zhang, NH;  Liu, HX;  Zeng, YP;  Li, JM;  Xiao, HL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(164Kb)  |  收藏  |  浏览/下载：1369/408  |  提交时间：2010/03/29
Molecular-beam Epitaxy  Wurtzite Inn  Nitride  Absorption  Alloys  Films  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1509/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 6 (5-6), Sendai, JAPAN, MAR 20-22, 2003
作者:  Leung BH;  Fong WK;  Surya C;  Lu LW;  Ge WK;  Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1366/281  |  提交时间：2010/10/29
Gan  Low-frequency Noise  Deep Levels  Deep Level Transient Fourier Spectroscopy  Devices  
Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Kang JY;  Shen YW;  Wang ZG;  Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
Adobe PDF(133Kb)  |  收藏  |  浏览/下载：1199/238  |  提交时间：2010/11/15
Defects  Gan  Photoluminescence  Electronic Structures  Yellow Luminescence  Epitaxial-films  Mg  
Electronic characteristics of InAs self-assembled quantum dots 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 7 (3-4), FUKUOKA, JAPAN, JUL 12-16, 1999
作者:  Wang HL;  Feng SL;  Zhu HJ;  Ning D;  Chen F;  Wang HL Qufu Normal Univ Dept Phys Qufu 273165 Peoples R China.
Adobe PDF(105Kb)  |  收藏  |  浏览/下载：1125/237  |  提交时间：2010/11/15
Inas/gaas Quantum Dots  Self-assembled Structure  Dlts  Pl  Band Offset  Energy-levels  Carrier Relaxation  Spectroscopy  
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(448Kb)  |  收藏  |  浏览/下载：995/186  |  提交时间：2010/11/15
Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy  
Dynamics of formation of defects in annealed InP 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1215/387  |  提交时间：2010/10/29
Defects Formation  Hydrogen Related Defects  Semi-insulating  Inp  
Formation mechanism of defects in annealed InP 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(383Kb)  |  收藏  |  浏览/下载：1150/254  |  提交时间：2010/10/29
Defects Formation  Hydrogen Related Defects  Semi-insulating  Inp