SEMI OpenIR

Browse/Search Results:  1-10 of 209 Help

Selected(0)Clear Items/Page:    Sort:
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(4152Kb)  |  Favorite  |  View/Download:1276/335  |  Submit date:2011/07/05
Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(343Kb)  |  Favorite  |  View/Download:1849/418  |  Submit date:2011/07/05
Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
NANOTECHNOLOGY, 2011, 卷号: 22, 期号: 23, 页码: Article no.235603
Authors:  Zhang BA;  Song HP;  Xu XQ;  Liu JM;  Wang J;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(1062Kb)  |  Favorite  |  View/Download:1380/425  |  Submit date:2011/07/05
Chemical-vapor-deposition  Semiconductor Nanowires  Nitride Nanotubes  Gan  Emission  Mechanism  
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
Adobe PDF(584Kb)  |  Favorite  |  View/Download:1526/365  |  Submit date:2011/07/05
Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(1941Kb)  |  Favorite  |  View/Download:1549/395  |  Submit date:2011/07/05
Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
Authors:  Wang J;  Liu XL;  Yang AL;  Zheng GL;  Yang SY;  Wei HY;  Zhu QS;  Wang ZG;  Liu, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xlliu@semi.ac.cn;  why@semi.ac.cn
Adobe PDF(659Kb)  |  Favorite  |  View/Download:1462/500  |  Submit date:2011/07/05
Sensitized Solar-cells  Photocatalyzed Transformation  Chloroaromatic Derivatives  Zinc-oxide  Films  Powder  Phenol  
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 319, 期号: 1, 页码: 114-117
Authors:  Zhang BA;  Song HP;  Wang J;  Jia CH;  Liu JM;  Xu XQ;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
Adobe PDF(611Kb)  |  Favorite  |  View/Download:1342/389  |  Submit date:2011/07/05
Anisotropy  Crystal Morphology  Metalorganic Chemical Vapor Deposition  A-plane Inn  Indium Nitride  Movpe Growth  Cubic Inn  Sapphire  Gan  Mbe  
GaN grown with InGaN as a weakly bonded layer 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
Authors:  Xu XQ;  Guo Y;  Liu XL;  Liu JM;  Song HP;  Zhang BA;  Wang J;  Yang SY;  Wei HY;  Zhu QS;  Wang ZG;  Xu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(524Kb)  |  Favorite  |  View/Download:1740/465  |  Submit date:2011/07/05
Chemical-vapor-deposition  Si(001) Substrate  Strain  Epitaxy  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(2010Kb)  |  Favorite  |  View/Download:1359/281  |  Submit date:2011/07/05
Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 39-42
Authors:  Shi K;  Yang AL;  Wang J;  Song HP;  Xu XQ;  Sang L;  Wei HY;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(602Kb)  |  Favorite  |  View/Download:1480/487  |  Submit date:2011/07/05
Metal Organic Chemical Vapor Deposition  Sapphire  Zinc Compounds  Semiconducting Ii-vi Materials  Vapor-phase Epitaxy  Optical-properties  Zno Nanorods  Raman-scattering  M-plane  Films  Photoluminescence  Deposition  Nanowires  Fields