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A Selective-Area Metal Bonding InGaAsP-Si Laser 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 卷号: 22, 期号: 15, 页码: 1141-1143
Authors:  Hong T (Hong Tao);  Ran GZ (Ran Guang-Zhao);  Chen T (Chen Ting);  Pan JQ (Pan Jiao-Qing);  Chen WX (Chen Wei-Xi);  Wang Y (Wang Yang);  Cheng YB (Cheng Yuan-Bing);  Liang S (Liang Song);  Zhao LJ (Zhao Ling-Juan);  Yin LQ (Yin Lu-Qiao);  Zhang JH (Zhang Jian-Hua);  Wang W (Wang Wei);  Qin GG (Qin Guo-Gang);  Hong, T, Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. E-mail Address: qingg@pku.edu.cn
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Ingaasp-si Laser  Selective-area Metal Bonding (Samb)  Si Photonics  
磷化铟单晶片的抛光工艺 专利
专利类型: 发明, 申请日期: 2003-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  董宏伟;  赵有文;  杨子祥;  焦景华
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Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Authors:  Dong ZY;  Zhao YW;  Zeng YP;  Duan ML;  Sun WR;  Jiao JH;  Lin LY;  Dong ZY,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(387Kb)  |  Favorite  |  View/Download:1465/402  |  Submit date:2010/08/12
Annealing  Defects  Etching  Semiconducting Indium Phosphide  Fe-doped Inp  Semiinsulating Inp  Indium-phosphide  Defects  Diffusion  Crystals  Wafers  
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Authors:  Dong HW;  Zhao YW;  Zeng YP;  Jiao JH;  Li JM;  Lin LY;  Dong HW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(145Kb)  |  Favorite  |  View/Download:1251/425  |  Submit date:2010/08/12
Diffusion  Interfaces  Substrates  Molecular Beam Epitaxy  Phosphides  Semiconducting Indium Phosphide  Undoped Semiinsulating Inp  Chemical-vapor-deposition  Phosphide Vapor  Fe  Interface  Photoluminescence  Wafer  Uniformity  Diffusion  Pressure  
Undoped semi-insulating indium phosphide (InP) and its applications 期刊论文
CHINESE SCIENCE BULLETIN, 2003, 卷号: 48, 期号: 4, 页码: 313-314
Authors:  Dong HW;  Zhao YW;  Jiao JH;  Zeng YP;  Li JM;  Lin LY;  Dong HW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(29Kb)  |  Favorite  |  View/Download:1177/572  |  Submit date:2010/08/12
Semiinsulating Inp  Wafer  Fe  Photoluminescence  Uniformity  Vapor  
提高(100)晶向磷化铟单晶的成晶率和质量的研究 期刊论文
人工晶体学报, 2003, 卷号: 32, 期号: 5, 页码: 460-463
Authors:  赵有文;  段满龙;  孙文荣;  杨子祥;  焦景华;  赵建群;  曹慧梅;  吕旭如
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Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
Authors:  Zhao YW;  Sun NF;  Dong HW;  Jiao JH;  Zhao JQ;  Sun TN;  Lin LY;  Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
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Indium Phosphide  Semi-insulating  Annealing  Picts  Photoluminescence  Semiinsulating Inp  Indium-phosphide  Fe  Photoluminescence  Temperature  
Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 卷号: 17, 期号: 6, 页码: 570-574
Authors:  Dong HW;  Zhao YW;  Lu HP;  Jiao JH;  Zhao JQ;  Lin LY;  Dong HW,Chinese Acad Sci,Ctr Mat Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Fe-doped Inp  Semiinsulating Inp  Electrical-properties  Room-temperature  Uniformity  Pressure  Ingot  
Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 4, 页码: 1968-1970
Authors:  Dong HW;  Zhao YW;  Zhang YH;  Jiao JH;  Zhao JQ;  Lin LY;  Dong HW,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Fe-doped Inp  Semiinsulating Inp  Undoped Inp  Spectroscopy  Wafer  Uniformity  Pressure  Traps  
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 卷号: 91, 期号: 0, 页码: 521-524
Authors:  Zhao YW;  Sun NF;  Dong HW;  Jiao JH;  Zhao JQ;  Sun TN;  Lin LY;  Sun NF,Hebei Semicond Res Inst,POB 179-40,Shijiazhuang 050002,Hebei,Peoples R China.
Adobe PDF(179Kb)  |  Favorite  |  View/Download:1371/385  |  Submit date:2010/08/12
Indium Phosphide  Semi-insulating  Annealing  Picts  Photoluminescence  Semiinsulating Inp  Indium-phosphide  Fe  Photoluminescence  Temperature