Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors
	Li, Z (Li, Z.); Li, CJ (Li, C. J.); Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov
	2006
会议名称	11th Conference on Defects Recognition Imaging and Physics in Semiconductors
会议录名称	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
页码	9 (1-3): 283-287
会议日期	SEP 13-19, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
出版者	ELSEVIER SCI LTD
ISSN	1369-8001
部门归属	brookhaven natl lab, upton, ny 11973 usa; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.
关键词	Dlts
学科领域	半导体器件
收录类别	CPCI（ISTP）
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10000
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov
推荐引用方式 GB/T 7714	Li, Z ,Li, CJ ,Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov. Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors[C]. THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND:ELSEVIER SCI LTD,2006:9 (1-3): 283-287.

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