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硅衬底氮化镓材料制备生长研究 学位论文
, 北京: 中国科学院大学, 2015
Authors:  冯玉霞
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Si衬底  Aln  Gan  生长机制  应力  
Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 389, 页码: 1-4
Authors:  Li, HJ;  Liu, CB;  Liu, GP;  Wei, HY;  Jiao, CM;  Wang, JX;  Zhang, H;  Jin, DD;  Feng, YX;  Yang, SY;  Wang, LS;  Zhu, QS;  Wang, ZG
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Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy 期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 97, 页码: 54902-54906
Authors:  Kong, SS;  Wei, HY;  Yang, SY;  Li, HJ;  Feng, YX;  Chen, Z;  Liu, XL;  Wang, LS;  Wang, ZG
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Significant quality improvement of GaN on Si upon formation of an AlN defective layer 期刊论文
CRYSTENGCOMM, 2014, 卷号: 16, 期号: 32, 页码: 7525-7528
Authors:  Feng, YX;  Wei, HY;  Yang, SY;  Zhang, H;  Kong, SS;  Zhao, GJ;  Liu, XL
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Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 卷号: 29, 期号: 4, 页码: 045015
Authors:  Feng, YX;  Liu, GP;  Yang, SY;  Wei, HY;  Liu, XL;  Zhu, QS;  Wang, ZG
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Competitive growth mechanisms of AlN on Si (111) by MOVPE 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6416
Authors:  Feng, YX;  Wei, HY;  Yang, SY;  Chen, Z;  Wang, LS;  Kong, SS;  Zhao, GJ;  Liu, XL
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Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 054513
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Feng ZH (Feng, Zhihong);  Meng LG (Meng, Lingguo);  Lv YJ (Lv, Yuanjie);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Wang ZG (Wang, Zhanguo)
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Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 434
Authors:  Lv YJ (Lv, Yuanjie);  Lin ZJ (Lin, Zhaojun);  Meng LG (Meng, Lingguo);  Luan CB (Luan, Chongbiao);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Feng ZH (Feng, Zhihong);  Wang ZG (Wang, Zhanguo)
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A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 098102
Authors:  Fu YC (Fu Ying-Chun);  Wang XF (Wang Xiao-Feng);  Fan ZC (Fan Zhong-Chao);  Yang X (Yang Xiang);  Bai YX (Bai Yun-Xia);  Zhang JY (Zhang Jia-Yong);  Ma HL (Ma Hui-Li);  Ji A (Ji An);  Yang FH (Yang Fu-Hua)
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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 3, 页码: Art. No. 036801
Authors:  Wu YX (Wu Yu-Xin);  Zhu JJ (Zhu Jian-Jun);  Chen GF (Chen Gui-Feng);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhao DG (Zhao De-Gang);  Wang H (Wang Hui);  Wang YT (Wang Yu-Tian);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
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Gan  Si (111) Substrate  Metalorganic Chemical Vapour Deposition  Aln Buffer Layer  Algan Interlayer  : Vapor-phase Epitaxy  Crack-free Gan  Stress-control  Si(111)  Deposition  Alxga1-xn  Film