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Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 2, 页码: 026801
Authors:  Wang, JX;  Wang, LS;  Yang, SY;  Li, HJ;  Zhao, GJ;  Zhang, H;  Wei, HY;  Jiao, CM;  Zhu, QS;  Wang, ZG
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Significant quality improvement of GaN on Si upon formation of an AlN defective layer 期刊论文
CRYSTENGCOMM, 2014, 卷号: 16, 期号: 32, 页码: 7525-7528
Authors:  Feng, YX;  Wei, HY;  Yang, SY;  Zhang, H;  Kong, SS;  Zhao, GJ;  Liu, XL
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Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 19, 页码: 193704
Authors:  Li, HJ;  Zhao, GJ;  Liu, GP;  Wei, HY;  Jiao, CM;  Yang, SY;  Wang, LS;  Zhu, QS
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Competitive growth mechanisms of AlN on Si (111) by MOVPE 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6416
Authors:  Feng, YX;  Wei, HY;  Yang, SY;  Chen, Z;  Wang, LS;  Kong, SS;  Zhao, GJ;  Liu, XL
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非极性 InGaN 薄膜的生长及相关物性研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  赵桂娟
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Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 2, 页码: 26801
Authors:  Sang, L;  Liu, JM;  Xu, XQ;  Wang, J;  Zhao, GJ;  Liu, CB;  Gu, CY;  Liu, GP;  Wei, HY;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 10-14
Authors:  Li, ZW;  Wei, HY;  Xu, XQ;  Zhao, GJ;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 10-14
Authors:  Li, ZW;  Wei, HY;  Xu, XQ;  Zhao, GJ;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
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Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 11, 页码: 117103
Authors:  Zhao GJ (Zhao Gui-Juan);  Li ZW (Li Zhi-Wei);  Wei HY (Wei Hong-Yuan);  Liu GP (Liu Gui-Peng);  Liu XL (Liu Xiang-Lin);  Yang SY (Yang Shao-Yan);  Zhu QS (Zhu Qin-Sheng);  Wang ZG (Wang Zhan-Guo)
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Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 16, 页码: 162102
Authors:  Liu, GP;  Wu, J;  Lu, YW;  Zhao, GJ;  Gu, CY;  Liu, CB;  Sang, L;  Yang, SY;  Liu, XL;  Zhu, QS;  Wang, ZG
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