SEMI OpenIR  > 中科院半导体材料科学重点实验室
Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures
Jin, DD; Wang, LS; Yang, SY; Zhang, LW; Li, HJ; Zhang, H; Wang, JX; Xiang, RF; Wei, HY; Jiao, CM; Liu, XL; Zhu, QS; Wang, ZG
2014
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume115Issue:4Pages:043702
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26066
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jin, DD,Wang, LS,Yang, SY,et al. Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures[J]. JOURNAL OF APPLIED PHYSICS,2014,115(4):043702.
APA Jin, DD.,Wang, LS.,Yang, SY.,Zhang, LW.,Li, HJ.,...&Wang, ZG.(2014).Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures.JOURNAL OF APPLIED PHYSICS,115(4),043702.
MLA Jin, DD,et al."Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures".JOURNAL OF APPLIED PHYSICS 115.4(2014):043702.
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