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Quantum dot quantum cascade infrared photodetector 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 17, 页码: 171108
Authors:  Wang, XJ;  Zhai, SQ;  Zhuo, N;  Liu, JQ;  Liu, FQ;  Liu, SM;  Wang, ZG
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Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2014, 卷号: 9, 页码: 470
Authors:  Sang, L;  Zhu, QS;  Yang, SY;  Liu, GP;  Li, HJ;  Wei, HY;  Jiao, CM;  Liu, SM;  Wang, ZG;  Zhou, XW;  Mao, W;  Hao, Y;  Shen, B
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Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet 期刊论文
CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 期号: 16, 页码: 1903-1906
Authors:  Zeng, C;  Zhang, SM;  Liu, JP;  Li, DY;  Jiang, DS;  Feng, MX;  Li, ZC;  Zhou, K;  Wang, F;  Wang, HB;  Wang, H;  Yang, H
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Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 卷号: 32, 期号: 3, 页码: 031204
Authors:  Li, XJ;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P;  Le, LC;  Yang, J;  He, XG;  Zhang, SM;  Zhu, JJ;  Wang, H;  Zhang, BS;  Liu, JP;  Yang, H
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Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 16, 页码: 163704
Authors:  Yang, J;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Yang, H;  Chen, P;  Liu, ZS;  Le, LC;  Li, XJ;  He, XG;  Liu, JP;  Zhang, SM;  Wang, H
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Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 10, 页码: 11392-11398
Authors:  Le, LC;  Zhao, DG;  Jiang, DS;  Yang, H;  Chen, P;  Liu, ZS;  Yang, J;  He, XG;  Li, XJ;  Liu, JP;  Zhu, JJ;  Zhang, SM
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Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文
THIN SOLID FILMS, 2014, 卷号: 564, 页码: 135-139
Authors:  He, XG;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P;  Le, LC;  Yang, J;  Li, XJ;  Zhang, SM;  Zhu, JJ;  Wang, H;  Yang, H
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Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 卷号: 32, 期号: 5, 页码: 051207
Authors:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P;  Liu, ZS;  Le, LC;  Yang, J;  Li, XJ;  Zhang, SM;  Yang, H
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Luminescence of La0.2Y1.8O3 nanostructured scintillators 期刊论文
OPTICS LETTERS, 2014, 卷号: 39, 期号: 19, 页码: 5705-5708
Authors:  Chen, W;  Tu, HQ;  Sahi, S;  Mao, DF;  Kenarangui, R;  Luo, JM;  Jin, P;  Liu, SM;  Ma, L;  Brandt, A;  Weiss, A
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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 6, 页码: 068801
Authors:  Yang, J;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P;  Li, L;  Wu, LL;  Le, LC;  Li, XJ;  He, XG;  Wang, H;  Zhu, JJ;  Zhang, SM;  Zhang, BS;  Yang, H
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