SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer
Wang, JX; Wang, LS; Yang, SY; Li, HJ; Zhao, GJ; Zhang, H; Wei, HY; Jiao, CM; Zhu, QS; Wang, ZG
2014
Source PublicationCHINESE PHYSICS B
Volume23Issue:2Pages:026801
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26053
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang, JX,Wang, LS,Yang, SY,et al. Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer[J]. CHINESE PHYSICS B,2014,23(2):026801.
APA Wang, JX.,Wang, LS.,Yang, SY.,Li, HJ.,Zhao, GJ.,...&Wang, ZG.(2014).Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer.CHINESE PHYSICS B,23(2),026801.
MLA Wang, JX,et al."Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer".CHINESE PHYSICS B 23.2(2014):026801.
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