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Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection
Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Guo J (Guo Jie); Tang B (Tang Bao); Ren ZW (Ren Zheng-Wei); He ZH (He Zhen-Hong); Niu ZC (Niu Zhi-Chuan); Wang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wangguowei@semi.ac.cn
2010
Source PublicationCHINESE PHYSICS LETTERS
Volume27Issue:7Pages:Art. No. 077305
AbstractInAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 mu m at 77 K, the peak directivity of the detectors is 1.6 x 10(10) cm.Hz(1/2) W-1 at 77 K.
metadata_24国内
KeywordIr Detection Modules Inas
Subject Area半导体物理
Funding OrganizationSupported by the National Natural Science Foundation of China under Grant No 60625405, and the National Basic Research Program of China under Grant Nos 2007CB936304 and 2010CB327601.
Indexed BySCI
Language英语
Date Available2010-08-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13477
Collection半导体超晶格国家重点实验室
Corresponding AuthorWang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wangguowei@semi.ac.cn
Recommended Citation
GB/T 7714
Wang GW ,Xu YQ ,Guo J ,et al. Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection[J]. CHINESE PHYSICS LETTERS,2010,27(7):Art. No. 077305.
APA Wang GW .,Xu YQ .,Guo J .,Tang B .,Ren ZW .,...&Wang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wangguowei@semi.ac.cn.(2010).Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection.CHINESE PHYSICS LETTERS,27(7),Art. No. 077305.
MLA Wang GW ,et al."Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection".CHINESE PHYSICS LETTERS 27.7(2010):Art. No. 077305.
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