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Tin dioxide quantum dots coupled with graphene for high-performance bulk-silicon Schottky photodetector 期刊论文
Materials Horizons, 2018, 卷号: 5, 期号: 4, 页码: 727-737
Authors:  Zhaoqiang Zheng;   Jiandong Yao;   Lianfeng Zhu;   Wei Jiang;   Bing Wang;   Guowei Yang;   Jingbo Li
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320 _ 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice 期刊论文
Infrared Physics & Technology, 2017, 卷号: 82, 页码: 140–143
Authors:  Sun Yaoyao;  Han Xi;  Hao Hongyue;  Jiang Dongwei;  Guo Chunyan;  Jiang Zhi;  Lv Yuexi;  Wang Guowei;  Xu Yingqiang;  Niu Zhichuan ⇑
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Short to long-wave IR detectors based on InAs/GaSb superlattices in multi-color application 期刊论文
Proceedings of the SPIE, 2013, 卷号: 8907, 页码: 89070R
Authors:  Guo, Jie;  Wang, Guowei;  Lin, Xu;  Hao, Ruiting
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掺Te的GaSb薄膜分子束外延生长及缺陷特性 期刊论文
红外与毫米波学报, 2012, 卷号: 31, 期号: 4, 页码: 298-301
Authors:  陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川
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中长波InAs/GaSb II类超晶格材料与红外探测器 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  王国伟
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2-5m InAs/GaSb superlattices infrared photodetector 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan;  Xu, Y.(yingqxu@semi.ac.cn)
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Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction  
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Authors:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun;  Song, Guofeng;  Xu, Y.(xuyun@semi.ac.cn)
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Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds  
2~5μm InAs/GaSb超晶格红外探测器 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  徐应强;  汤宝;  王国伟;  任正伟;  牛智川
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图形衬底量子线生长制备与荧光特性研究 期刊论文
物理学报, 2011, 卷号: 60, 期号: 2, 页码: 020703-1-020703-5
Authors:  王秀平;  杨晓红;  韩勤;  鞠研玲;  杜云;  朱彬;  王杰;  倪海桥;  贺继方;  王国伟;  牛智川
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GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 2, 页码: Art. No. 028102
Authors:  Tang B;  Xu YQ;  Zhou ZQ;  Hao RT;  Wang GW;  Ren ZW;  Niu ZC;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China. E-mail Address: yingqxu@semi.ac.cn
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Inas/ga1-xinxsb Superlattice  Gasb  Heterojunctions  Photodiodes  Segregation  Layers  Inas  Alsb