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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:  Zhu JH;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Qiu YX;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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Diodes  Efficiency  
The fabrication of GaN-based nanopillar light-emitting diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 074302
Authors:  Zhu JH (Zhu Jihong);  Wang LJ (Wang Liangji);  Zhang SM (Zhang Shuming);  Wang H (Wang Hui);  Zhao DG (Zhao Degang);  Zhu JJ (Zhu Jianjun);  Liu ZS (Liu Zongshun);  Jiang DS (Jiang Desheng);  Yang H (Yang Hui);  Zhu, JH, Chinese AcadSci, State Key Lab Integrated Optoelect, InstSemicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Masks  Ni  
Internal quantum efficiency analysis of solar cell by genetic algorithm 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, Chinese Acad Sci, Inst Semicond, A35 Qing Hua E Rd, Beijing 100083, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Internal Quantum Efficiency  Surface Recombination  Genetic Algorithm  Full Spectra  
Effective recombination velocity of textured surfaces 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 19, 页码: Art. No. 193107
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Jiang DS (Jiang Desheng);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Xiong, KL, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Carrier Lifetime  Numerical Analysis  Semiconductor Thin Films  Surface Recombination  Surface Texture  
Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 12, 页码: Art. No. 124501
Authors:  Xiong KL (Xiong Kanglin);  He W (He Wei);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, CAS, Suzhou Inst Nanotech & Nanobion, Ruoshui Rd 398, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Resistance  Reciprocity  Diode  
Light-splitting photovoltaic system utilizing two dual-junction solar cells 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 12, 页码: 1975-1978
Authors:  Xiong KL;  Lu SL;  Dong JR;  Zhou TF;  Jiang DS;  Wang RX;  Yang H;  Yang, H, CAS, Suzhou Inst Nano Tech & Nano Bion, Ruoshui Rd 398, Suzhou 215125, Peoples R China.
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Light Splitting  Gainp/gaas  Gainasp/ingaas  Dual Junction  
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  Deng Y;  Zhao DG;  Wu LL;  Liu ZS;  Zhu JJ;  Jiang DS;  Zhang SM;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Gan  Ultraviolet And Infrared Photodetector  Quantum Efficiency  Solar-blind  
高阻氮化镓外延层的异常光吸收 期刊论文
物理学报, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Authors:  刘文宝;  赵德刚;  江德生;  刘宗顺;  朱建军;  张书明;  杨辉
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