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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:
Deng Y
;
Zhao DG
;
Le LC
;
Jiang DS
;
Wu LL
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Yang H
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(311Kb)
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View/Download:1709/520
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Submit date:2011/07/05
Nitride Materials
Crystal Growth
Composition Fluctuations
X-ray Diffraction
Layer
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:
Zhu JH
;
Wang LJ
;
Zhang SM
;
Wang H
;
Zhao DG
;
Zhu JJ
;
Liu ZS
;
Jiang DS
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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View/Download:1594/524
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Submit date:2011/07/05
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:
Zhu JH
;
Zhang SM
;
Wang H
;
Zhao DG
;
Zhu JJ
;
Liu ZS
;
Jiang DS
;
Qiu YX
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Adobe PDF(1688Kb)
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View/Download:1610/448
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Submit date:2011/07/05
Diodes
Efficiency
The fabrication of GaN-based nanopillar light-emitting diodes
期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 074302
Authors:
Zhu JH (Zhu Jihong)
;
Wang LJ (Wang Liangji)
;
Zhang SM (Zhang Shuming)
;
Wang H (Wang Hui)
;
Zhao DG (Zhao Degang)
;
Zhu JJ (Zhu Jianjun)
;
Liu ZS (Liu Zongshun)
;
Jiang DS (Jiang Desheng)
;
Yang H (Yang Hui)
;
Zhu, JH, Chinese AcadSci, State Key Lab Integrated Optoelect, InstSemicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
Adobe PDF(536Kb)
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View/Download:1476/463
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Submit date:2010/11/14
Masks
Ni
Internal quantum efficiency analysis of solar cell by genetic algorithm
期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891
Authors:
Xiong KL (Xiong Kanglin)
;
Lu SL (Lu Shulong)
;
Zhou TF (Zhou Taofei)
;
Jiang DS (Jiang Desheng)
;
Wang RX (Wang Rongxin)
;
Qiu K (Qiu Kai)
;
Dong JR (Dong Jianrong)
;
Yang H (Yang Hui)
;
Yang, H, Chinese Acad Sci, Inst Semicond, A35 Qing Hua E Rd, Beijing 100083, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
Adobe PDF(301Kb)
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View/Download:1235/519
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Submit date:2010/11/27
Internal Quantum Efficiency
Surface Recombination
Genetic Algorithm
Full Spectra
Effective recombination velocity of textured surfaces
期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 19, 页码: Art. No. 193107
Authors:
Xiong KL (Xiong Kanglin)
;
Lu SL (Lu Shulong)
;
Jiang DS (Jiang Desheng)
;
Dong JR (Dong Jianrong)
;
Yang H (Yang Hui)
;
Xiong, KL, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
Adobe PDF(272Kb)
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View/Download:1310/440
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Submit date:2010/06/04
Carrier Lifetime
Numerical Analysis
Semiconductor Thin Films
Surface Recombination
Surface Texture
Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence
期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 12, 页码: Art. No. 124501
Authors:
Xiong KL (Xiong Kanglin)
;
He W (He Wei)
;
Lu SL (Lu Shulong)
;
Zhou TF (Zhou Taofei)
;
Jiang DS (Jiang Desheng)
;
Wang RX (Wang Rongxin)
;
Qiu K (Qiu Kai)
;
Dong JR (Dong Jianrong)
;
Yang H (Yang Hui)
;
Yang, H, CAS, Suzhou Inst Nanotech & Nanobion, Ruoshui Rd 398, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
Adobe PDF(517Kb)
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View/Download:1128/425
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Submit date:2010/08/17
Resistance
Reciprocity
Diode
Light-splitting photovoltaic system utilizing two dual-junction solar cells
期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 12, 页码: 1975-1978
Authors:
Xiong KL
;
Lu SL
;
Dong JR
;
Zhou TF
;
Jiang DS
;
Wang RX
;
Yang H
;
Yang, H, CAS, Suzhou Inst Nano Tech & Nano Bion, Ruoshui Rd 398, Suzhou 215125, Peoples R China.
Adobe PDF(681Kb)
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View/Download:1306/436
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Submit date:2011/07/05
Light Splitting
Gainp/gaas
Gainasp/ingaas
Dual Junction
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector
期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:
Deng Y
;
Zhao DG
;
Wu LL
;
Liu ZS
;
Zhu JJ
;
Jiang DS
;
Zhang SM
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(853Kb)
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View/Download:1247/230
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Submit date:2011/07/05
Gan
Ultraviolet And Infrared Photodetector
Quantum Efficiency
Solar-blind
高阻氮化镓外延层的异常光吸收
期刊论文
物理学报, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Authors:
刘文宝
;
赵德刚
;
江德生
;
刘宗顺
;
朱建军
;
张书明
;
杨辉
Adobe PDF(685Kb)
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View/Download:886/161
  |  
Submit date:2011/08/16