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Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 1.65 μm 期刊论文
Optics Letters, 2018, 卷号: 43, 期号: 13, 页码: 3025-3028
Authors:  HUI -HONG YUAN;   FENG GAO;  TAO YANG
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1-2.9-THz Tunable Terahertz Beat Signal Generation Based on InAs-InP Quantum-Dot Mode-Locked Laser 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2018, 卷号: 30, 期号: 13, 页码: 1234-1237
Authors:  Yun-Yun Ding;   Feng Gao;   Hui-Hong Yuan;   Zun-Ren Lv;   Tao Yang ;   Member,IEEE
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Continuously tunable mode-spacing of a dual-mode external cavity InAs/InP quantum dot laser 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 24, 页码: 6846-6850
Authors:  HUI-HONG YUAN;  FENG GAO;  TAO YANG
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Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 4, 页码: 048105
Authors:  Dong-Yue Han;  Hui-Jie Li;  Gui-Juan Zhao;  Hong-Yuan Wei;  Shao-Yan Yang;  Lian-Shan Wang
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Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 2, 页码: 26802-26806
Authors:  Jian-Xia Wang;  Lian-Shan Wang;  Qian Zhang;  Xiang-Yue Meng;  Shao-Yan Yang;  Gui-Juan Zhao;  Hui-Jie Li;  Hong-Yuan Wei;  Zhan-Guo Wang
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缓冲层厚度对MOCVD法生长GaN外延薄膜性能的影响 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 3, 页码: 466-470
Authors:  吴洁君;  韩修训;  李杰民;  黎大兵;  魏宏远;  康亭亭;  王晓晖;  刘祥林;  王占国
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基于硫化物表面处理的InP/GaAs低温晶片键合 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 8, 页码: 1667-1670
Authors:  黄辉;  王兴妍;  王琦;  陈斌;  黄永清;  任晓敏;  孙增辉;  钟源;  高俊华;  马骁宇;  陈弘达;  陈良惠
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GaN的声表面波特性研究 期刊论文
发光学报, 2003, 卷号: 24, 期号: 2, 页码: 161-164
Authors:  严莉;  陈晓阳;  何世堂;  李红浪;  韩培德;  陈振;  陆大成;  刘祥林;  王晓晖;  李昱峰;  袁海荣;  陆沅;  黎大兵;  朱勤生;  王占国
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Pt/n-GaN肖特基接触的退火行为 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 3, 页码: 279-283
Authors:  张泽洪;  孙元平;  赵德刚;  段俐宏;  王俊;  沈晓明;  冯淦;  冯志宏;  杨辉
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立方相GaN的持续光电导 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 1, 页码: 34-38
Authors:  张泽洪;  赵德刚;  孙元平;  冯志宏;  沈晓明;  张宝顺;  冯淦;  郑新和;  杨辉
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