SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Pt/n-GaN肖特基接触的退火行为
张泽洪; 孙元平; 赵德刚; 段俐宏; 王俊; 沈晓明; 冯淦; 冯志宏; 杨辉
2003
Source Publication半导体学报
Volume24Issue:3Pages:279-283
Abstract在金属有机物气相外延(MOVPE)方法生长的非故意掺杂的n-GaN上用Pt制成了肖特基接触,并在250-650℃范围内对该接触进行退火。通过实验发现,Pt与非故意掺杂n-GaN外延薄膜可以形成较好的肖特基接触,而适当的退火温度可以有效地改善Pt/n-GaN肖特基接触的性质。在该实验条件下,400℃温度下退火后的Pt/n-GaN肖特基接触,势垒高度最大,理想因子最小。在600℃以上温度退火后,该接触特性受到破坏,SEM显示在该温度下,Pt已经在GaN表面凝聚成球,表面形成孔洞。
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金(批准号:698251 7),NSFC-RGC联合基金(批准号:5 1161953,N_HKU 28/ )资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:1295216
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17703
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张泽洪,孙元平,赵德刚,等. Pt/n-GaN肖特基接触的退火行为[J]. 半导体学报,2003,24(3):279-283.
APA 张泽洪.,孙元平.,赵德刚.,段俐宏.,王俊.,...&杨辉.(2003).Pt/n-GaN肖特基接触的退火行为.半导体学报,24(3),279-283.
MLA 张泽洪,et al."Pt/n-GaN肖特基接触的退火行为".半导体学报 24.3(2003):279-283.
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