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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  X. Li;  S. T. Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  L. C. Le;  W. Liu;  X.G. He;  X. J. Li;  X Li;  S. T Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  J. J. Zhu;  Z. S. Liu;  J. Yang;  X. Li;  L. C. Le;  X. G. He;  W. Liu;  X. J. Li;  F. Liang;  B. S. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Materials Technology, 2016
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. Li;  S. T. Liu;  H. Yang;  L. Q. Zhang;  J. P. Liu;  Y. T. Zhang;  G. T. Du
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Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes 期刊论文
Optics Express, 2016, 卷号: 24, 期号: 13, 页码: 13824-13831
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  X. J. Li;  X. G. He;  J. P. Liu;  L. Q. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  H. Yang;  Y. T. Zhang;  G. T. Du
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Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 15935
Authors:  W. Liu;  D. G. Zhao;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  M. Shi;  D. M.Zhao;  X. Li;  J. P. Liu;  S. M. Zhang;  H. Wang;  H. Yang;  Y. T. Zhang;  G. T.Du
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增强型AlGaN/GaN HEMT器件工艺的研究进展 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 10, 页码: 771-777
Authors:  杜彦东;  韩伟华;  颜伟;  张严波;  熊莹;  张仁平;  杨富华
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