Selected(0)Clear
Items/Page: Sort: |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 Applied Physics A, 2016, 卷号: 122, 期号: 9 Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
Adobe PDF(1612Kb)  |   Favorite  |  View/Download:193/2  |  Submit date:2017/03/10 |
| XPS study of impurities in Si-doped AlN film 期刊论文 Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
Adobe PDF(360Kb)  |   Favorite  |  View/Download:209/4  |  Submit date:2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文 AIP ADVANCES, 2016, 卷号: 6, 页码: 035124 Authors: P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
Adobe PDF(3219Kb)  |   Favorite  |  View/Download:203/3  |  Submit date:2017/03/10 |
| Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 Materials Technology, 2016 Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du
Adobe PDF(1268Kb)  |   Favorite  |  View/Download:344/5  |  Submit date:2017/03/10 |
| Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes 期刊论文 Optics Express, 2016, 卷号: 24, 期号: 13, 页码: 13824-13831 Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang; Y. T. Zhang; G. T. Du
Adobe PDF(3746Kb)  |   Favorite  |  View/Download:196/2  |  Submit date:2017/03/10 |
| Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文 JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709 Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
Adobe PDF(1581Kb)  |   Favorite  |  View/Download:458/1  |  Submit date:2016/03/23 |
| Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文 OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 15935 Authors: W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
Adobe PDF(1377Kb)  |   Favorite  |  View/Download:223/1  |  Submit date:2016/03/23 |