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Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 卷号: 13, 期号: 2, 页码: 804-807
Authors:  Zhang, Yanbo;  Du, Yandong;  Chen, Yankun;  Li, Xiaoming;  Yang, Xiang;  Han, Weihua;  Yang, Fuhua
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Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 22, 页码: 223507
Authors:  Li, Xiaoming;  Han, Weihua;  Wang, Hao;  Ma, Liuhong;  Zhang, Yanbo;  Du, Yandong;  Yang, Fuhua
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Low-Temperature Quantum Transport Characteristics in Single n-ChannelJunctionless Nanowire Transistors 期刊论文
Electron Device Letters, IEEE, 2013, 卷号: 34, 期号: 5, 页码: 581-583
Authors:  Li, Xiaoming;  Han, Weihua;  Ma, Liuhong;  Wang, Hao;  Zhang, Yanbo;  Yang, Fuhua
Adobe PDF(396Kb)  |  Favorite  |  View/Download：653/149  |  Submit date：2014/03/26
Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless Nanowire Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 5, 页码: 581-583
Authors:  Li, Xiaoming;  Han, Weihua;  Ma, Liuhong;  Wang, Hao;  Zhang, Yanbo;  Yang, Fuhua
Adobe PDF(396Kb)  |  Favorite  |  View/Download：961/281  |  Submit date：2013/08/27
多面栅FinFET的制备与电学特性研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  张严波
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Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 9, 页码: 94001
Authors:  Zhang, Yanbo;  Du, Yandong;  Xiong, Ying;  Yang, Xiang;  Han, Weihua;  Yang, Fuhua,;  Han, W.(weihua@semi.ac.cn)
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Carrier Concentration  Electric Fields  Fins(Heat Exchange)  
增强型AlGaN/GaN HEMT器件工艺的研究进展 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 10, 页码: 771-777
Authors:  杜彦东;  韩伟华;  颜伟;  张严波;  熊莹;  张仁平;  杨富华
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Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 卷号: 10, 期号: 11 Sp. Iss. SI, 页码: 7113-7116
Authors:  Zhang YB (Zhang Yanbo);  Xiong Y (Xiong Ying);  Yang XA (Yang Xiang);  Wang Y (Wang Ying);  Han WH (Han Weihua);  Yang FH (Yang Fuhua);  Han, WH, Chinese Acad Sci, Inst Semicond, Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.
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Subthreshold Swing (Ss)  Silicon-on-insulator (Soi)  Nanowire  Wrap Gate  Side Gates  
SiO2/SiN双层钝化层T型栅AlGaN/GaN HEMT及制作方法 专利
专利类型: 发明, 专利号: CN102437182A, 公开日期: 2012-09-07, 2012-05-02, 2012-09-07
Inventors:  杜彦东;  韩伟华;  颜伟;  张严波;  杨富华
Adobe PDF(344Kb)  |  Favorite  |  View/Download：1301/383  |  Submit date：2012/09/07
半导体晶体管结构及其制造方法 专利
专利类型: 发明, 专利号: CN102280454A, 公开日期: 2012-09-07, 2011-12-14, 2012-09-07
Inventors:  张严波;  韩伟华;  杜彦东;  李小明;  陈艳坤;  杨香;  杨富华
Adobe PDF(941Kb)  |  Favorite  |  View/Download：1164/342  |  Submit date：2012/09/07