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负电子亲和势AlN平面冷阴极发射特性研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  侍铭
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Aln  冷阴极  场致电子发射  硅掺杂  击穿  
Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 266–270
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  M. Shi;  D.M. Zhao;  X. Li;  J.P. Liu;  S.M. Zhang;  H. Wang;  H. Yang
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A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 80, 期号: 2015, 页码: 111–117
Authors:  X. Li;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  M. Shi;  D.M. Zhao;  W. Liu;  J.J. Zhu;  S.M. Zhang;  H. Yang
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Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 15935
Authors:  W. Liu;  D. G. Zhao;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  M. Shi;  D. M.Zhao;  X. Li;  J. P. Liu;  S. M. Zhang;  H. Wang;  H. Yang;  Y. T. Zhang;  G. T.Du
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Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 11, 页码: 113509
Authors:  Shi K (Shi K.);  Zhang PF (Zhang P. F.);  Wei HY (Wei H. Y.);  Jiao CM (Jiao C. M.);  Jin P (Jin P.);  Liu XL (Liu X. L.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Wang ZG (Wang Z. G.)
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A transformer-loaded receiver front end for2.4 GHz WLAN in0.13μm CMOS technology 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 12, 页码: 125002
Authors:  Peng, Miao;  Lin, Min;  Shi, Yin;  Fa, Foster Dai;  Peng, M.(pengmiao1985@163.com)
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Cmos Integrated Circuits  Standards  
片上集成自动可调谐非对称带通滤波器 期刊论文
华中科技大学学报. 自然科学版, 2009, 卷号: 37, 期号: 9, 页码: 4-7
Authors:  陈方雄;  林敏;  石寅
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一种带有精准调谐结构的有源RC低通滤波器的设计 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 11, 页码: 2238-2244
Authors:  陈方雄;  林敏;  陈备;  贾海珑;  石寅;  代伐
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n-GaAs和p-GaN晶片的直接键合 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 11, 页码: 1815-1817
Authors:  李慧;  何国荣;  渠红伟;  石岩;  种明;  曹玉莲;  陈良惠
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Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 14, 页码: Art.No.143505
Authors:  Wang RX (Wang R. X.);  Xu SJ (Xu S. J.);  Shi SL (Shi S. L.);  Beling CD (Beling C. D.);  Fung S (Fung S.);  Zhao DG (Zhao D. G.);  Yang H (Yang H.);  Tao XM (Tao X. M.);  Wang, RX, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Dislocations  Degradation