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| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; W. LIU; X. G. HE; X. J. LI; F. LIANG; S. T. LIU; Y. XING; L. Q. ZHANG; M. LI; J. ZHANG
 Adobe PDF(723Kb) |  Favorite | View/Download：508/0 | Submit date：2018/07/11 |
| Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B=MgO Injectors with Different MgO Growth Processes 期刊论文
PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 054027
Authors: P. Barate; S. H. Liang; T. T. Zhang; J. Frougier; B. Xu; P. Schieffer; M. Vidal; H. Jaffrès; B. Lépine; S. Tricot; F. Cadiz; T. Garandel; J. M. George; T. Amand; X. Devaux; M. Hehn; S. Mangin; B. Tao; X. F. Han; Z. G. Wang; X. Marie; Y. Lu; P. Renucci
Adobe PDF(1567Kb) | Favorite | View/Download：116/2 | Submit date：2018/05/30 |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
Adobe PDF(1612Kb) | Favorite | View/Download：167/2 | Submit date：2017/03/10 |
| XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
Adobe PDF(360Kb) | Favorite | View/Download：184/4 | Submit date：2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors: P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
Adobe PDF(3219Kb) | Favorite | View/Download：181/3 | Submit date：2017/03/10 |
| Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Materials Technology, 2016
Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du
Adobe PDF(1268Kb) | Favorite | View/Download：321/5 | Submit date：2017/03/10 |
| Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes 期刊论文
Optics Express, 2016, 卷号: 24, 期号: 13, 页码: 13824-13831
Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang; Y. T. Zhang; G. T. Du
Adobe PDF(3746Kb) | Favorite | View/Download：164/2 | Submit date：2017/03/10 |
| Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
Adobe PDF(1581Kb) | Favorite | View/Download：432/1 | Submit date：2016/03/23 |
| Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 15935
Authors: W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
Adobe PDF(1377Kb) | Favorite | View/Download：201/1 | Submit date：2016/03/23 |
| Anomalous electron collimation in HgTe quantum wells with inverted band structure 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2013, 卷号: 25, 期号: 7, 页码: 075801
Authors: Zou, Y. L.; Zhang, L. B.; Song, J. T.
Adobe PDF(534Kb) | Favorite | View/Download：700/161 | Submit date：2013/09/22 |
