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| 氮化铝谐振式压电MEMS 加速度计研究 学位论文 , 中国科学院半导体研究所: 中国科学院大学, 2019 Authors: 杨健
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| The compensation role of deep defects in the electric properties of lightly Si-doped GaN 期刊论文 Journal of Alloys and Compounds, 2019, 卷号: 773, 页码: 1182-1186 Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; M. Li
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| Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes 期刊论文 Applied Physics B, 2019, 卷号: 125, 页码: 235 Authors: J. Yang ; D. G. Zhao ; J. J. Zhu ; Z. S. Liu ; D. S. Jiang ; P. Chen ; F. Liang ; S. T. Liu ; Y. Xing
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| Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer 期刊论文 Optics and Laser Technology, 2019, 卷号: 111, 页码: 810-813 Authors: J. Yang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li
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| Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40 Authors: J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li
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| Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文 OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17 Authors: J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li
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| The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文 Optical Materials, 2018, 卷号: 86, 页码: 460-463 Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Y. Peng ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
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| Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695 Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
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| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文 AIP Advances, 2017, 卷号: 7, 页码: 035103 Authors: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li; J. Yang; J. J. Zhu; Z. S. Liu; X. J. Li; W. Liu; X. Li; F. Liang; J. P. Liu; B. S. Zhang; H. Yang
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| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文 Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466 Authors: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; W. LIU; X. G. HE; X. J. LI; F. LIANG; S. T. LIU; Y. XING; L. Q. ZHANG; M. LI; J. ZHANG
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