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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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光电子研究发展中心 [11]
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold
期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:
X. LI
;
Z. S. LIU
;
D. G. ZHAO
;
D. S. JIANG
;
P. CHEN
;
J. J. ZHU
;
J. YANG
;
W. LIU
;
X. G. HE
;
X. J. LI
;
F. LIANG
;
S. T. LIU
;
Y. XING
;
L. Q. ZHANG
;
M. LI
;
J. ZHANG
Adobe PDF(723Kb)
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Submit date:2018/07/11
Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD
期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:
F. Liang
;
P. Chen
;
D. G. Zhao
;
D. S. Jiang
;
Z. J. Zhao
;
Z. S. Liu
;
J. J. Zhu
;
J. Yang
;
W. Liu
;
X. G. He
;
X. J. Li
;
X. Li
;
S. T. Liu
;
H. Yang
;
J. P. Liu
;
L. Q. Zhang
;
Y. T. Zhang
;
G. T. Du
Adobe PDF(1612Kb)
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View/Download:193/2
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Submit date:2017/03/10
The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content
期刊论文
physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228
Authors:
X. Li
;
D. G. Zhao*
;
D. S. Jiang
;
P. Chen
;
Z. S. Liu
;
J. J. Zhu
;
J. Yang
;
W. Liu
;
X. G. He
;
X. J. Li
;
F. Liang
;
L. Q. Zhang
;
J. P. Liu
;
H. Yang
Adobe PDF(889Kb)
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View/Download:265/1
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Submit date:2017/03/10
Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes
期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 011206
Authors:
J. Yang
;
D. G. Zhao
;
D. S. Jiang
;
P. Chen
;
J. J. Zhu
;
Z. S. Liu
;
L. C. Le
;
X. J. Li
;
X. G. He
;
J. P. Liu
;
L. Q. Zhang
;
H. Yang
Adobe PDF(894Kb)
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View/Download:328/3
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Submit date:2017/03/10
XPS study of impurities in Si-doped AlN film
期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors:
F. Liang
;
P. Chen
;
D. G. Zhao
;
D. S. Jiang
;
Z. J. Zhao
;
Z. S. Liu
;
J. J. Zhu
;
J. Yang
;
L. C. Le
;
W. Liu
;
X.G. He
;
X. J. Li
;
X Li
;
S. T Liu
;
H. Yang
;
J. P. Liu
;
L. Q. Zhang
;
Y. T. Zhang
;
G. T. Du
Adobe PDF(360Kb)
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Submit date:2017/03/10
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes
期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors:
P. Chen
;
D. G. Zhao
;
D. S. Jiang
;
J. J. Zhu
;
Z. S. Liu
;
J. Yang
;
X. Li
;
L. C. Le
;
X. G. He
;
W. Liu
;
X. J. Li
;
F. Liang
;
B. S. Zhang
;
H. Yang
;
Y. T. Zhang
;
G. T. Du
Adobe PDF(3219Kb)
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View/Download:203/3
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Submit date:2017/03/10
Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes
期刊论文
Optics Express, 2016, 卷号: 24, 期号: 13, 页码: 13824-13831
Authors:
J. Yang
;
D. G. Zhao
;
D. S. Jiang
;
P. Chen
;
Z. S. Liu
;
J. J. Zhu
;
X. J. Li
;
X. G. He
;
J. P. Liu
;
L. Q. Zhang
;
H. Yang
;
Y. T. Zhang
;
G. T. Du
Adobe PDF(3746Kb)
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View/Download:196/2
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Submit date:2017/03/10
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness
期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:
J. Yang
;
D. G. Zhao
;
D. S. Jiang
;
P. Chen
;
J. J. Zhu
;
Z. S. Liu
;
L. C. Le
;
X. J. Li
;
X. G. He
;
J. P. Liu
;
H. Yang
;
Y. T. Zhang
;
G. T. Du
Adobe PDF(1581Kb)
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View/Download:458/1
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Submit date:2016/03/23
Differential resistance of GaN-based laser diodes with and without polarization effect
期刊论文
APPLIED OPTICS, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711
Authors:
X. LI
;
Z. S. LIU
;
D. G. ZHAO
;
D. S. JIANG
;
P. CHEN
;
J. J. ZHU
;
J. YANG
;
L. C. LE
;
W. LIU
;
X. G. HE
;
X. J. LI
;
F. LIANG
;
L. Q. ZHANG
;
J. Q. LIU
;
H. YANG
Adobe PDF(984Kb)
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Submit date:2016/03/23
The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN
期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 16, 页码: 163708
Authors:
Li, X. J.
;
Zhao, D. G.
;
Jiang, D. S.
;
Liu, Z. S.
;
Chen, P.
;
Zhu, J. J.
;
Le, L. C.
;
Yang, J.
;
He, X. G.
;
Zhang, S. M.
;
Zhang, B. S.
;
Liu, J. P.
;
Yang, H.
Adobe PDF(1040Kb)
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Submit date:2015/03/19