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| Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes 期刊论文 Applied Physics B, 2019, 卷号: 125, 页码: 235 Authors: J. Yang ; D. G. Zhao ; J. J. Zhu ; Z. S. Liu ; D. S. Jiang ; P. Chen ; F. Liang ; S. T. Liu ; Y. Xing
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| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文 AIP Advances, 2017, 卷号: 7, 页码: 035103 Authors: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li; J. Yang; J. J. Zhu; Z. S. Liu; X. J. Li; W. Liu; X. Li; F. Liang; J. P. Liu; B. S. Zhang; H. Yang
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| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文 Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466 Authors: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; W. LIU; X. G. HE; X. J. LI; F. LIANG; S. T. LIU; Y. XING; L. Q. ZHANG; M. LI; J. ZHANG
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| Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy 期刊论文 PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 4, 页码: 045116 Authors: Y. Jiang; S. Thapa; G. D. Sanders; C. J. Stanton; Q. Zhang; J. Kono; W. K. Lou; K. Chang; S. D. Hawkins; J. F. Klem; W. Pan; D. Smirnov; Z. Jiang
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| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文 Scientific Reports, 2017, 卷号: 7, 页码: 44850 Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; W. Liu; X. Li; F. Liang; S. T. Liu; L. Q. Zhang; H. Yang
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| Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文 OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602 Authors: J. YANG; D. G. ZHAO; D. S. JIANG; X. LI; F. LIANG; P. CHEN; J. J. ZHU; Z. S. LIU; S. T. LIU; L. Q. ZHANG; M. LI
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| Polarization-independent plasmonic subtractive color filtering in ultrathin Ag nanodisks with high transmission 期刊论文 Applied Optics, 2016, 卷号: 55, 期号: 1, 页码: 148-152 Authors: X. L. HU; L. B. SUN; BEIBEI ZENG; L. S. WANG; Z. G. YU; S. A. BAI; S. M. YANG; L. X. ZHAO; Q. LI; M. QIU; R. Z. TAI; H. J. FECHT; J. Z. JIANG; D. X. ZHANG
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| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 Applied Physics A, 2016, 卷号: 122, 期号: 9 Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
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| The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文 physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228 Authors: X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang
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| Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文 Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 011206 Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang
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