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| Improving the performance of optical antenna for optical phased arrays through high- contrast grating structure on SOI substrate 期刊论文 Optics Express, 2019, 卷号: 27, 期号: 3, 页码: 2703-2712 Authors: P. F. WANG ; G. Z. LUO ; H. Y. YU ; Y. J. LI ; M. Q. WANG ; X. L. ZHOU ; W. X. CHEN; Y. J. ZHANG ; , J. Q. PAN
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| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文 AIP Advances, 2017, 卷号: 7, 页码: 035103 Authors: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li; J. Yang; J. J. Zhu; Z. S. Liu; X. J. Li; W. Liu; X. Li; F. Liang; J. P. Liu; B. S. Zhang; H. Yang
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| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文 Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466 Authors: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; W. LIU; X. G. HE; X. J. LI; F. LIANG; S. T. LIU; Y. XING; L. Q. ZHANG; M. LI; J. ZHANG
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| Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) 期刊论文 JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102 Authors: Z. Fu; Z. G. Yin; X. W. Zhang; N. F. Chen; Y. J. Zhao; Y. M. Bai; D. Y. Zhao; H. F. Zhang; Y. D. Yuan; Y. N. Chen; J. L. Wu; J. B. You
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| Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation 期刊论文 Journal of Applied Physics, 2017, 卷号: 121, 页码: 193901 Authors: X. L. Zeng; J. L. Yu; S. Y. Cheng; Y. F. Lai, Y. H. Chen; W. Huang
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| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文 Scientific Reports, 2017, 卷号: 7, 页码: 44850 Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; W. Liu; X. Li; F. Liang; S. T. Liu; L. Q. Zhang; H. Yang
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| Different annealing temperature suitable for different Mg doped P-GaN 期刊论文 Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68 Authors: S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang; P. Chen; J.J. Zhu; Z.S. Liu; X. Li; W. Liu; L.Q. Zhang; H. Long; M. Li
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| Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39 Authors: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; W. Liu; F. Liang; X. Li; S.T. Liu; L.Q. Zhang; H. Yang
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| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 Applied Physics A, 2016, 卷号: 122, 期号: 9 Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
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| Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文 Chemical Physics Letters, 2016, 卷号: 651, 页码: 76-79 Authors: F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du
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