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Improving the performance of optical antenna for optical phased arrays through high- contrast grating structure on SOI substrate 期刊论文
Optics Express, 2019, 卷号: 27, 期号: 3, 页码: 2703-2712
Authors:  P. F. WANG ;   G. Z. LUO ;   H. Y. YU ;   Y. J. LI ;   M. Q. WANG ;   X. L. ZHOU ;   W. X. CHEN;   Y. J. ZHANG ;   , J. Q. PAN
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Landau levels and magneto-transport property of monolayer phosphorene 期刊论文
Scientific Reports, 2015, 卷号: 5, 页码: 12295
Authors:  X. Y. Zhou;  R. Zhang;  J. P. Sun;  Y. L. Zou;  D. Zhang;  W. K. Lou;  F. Cheng;  G. H. Zhou;  F. Zhai;  Kai Chang
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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 1, 页码: 014304
Authors:  P. Y. Zhou;  X. F. Wu;  K. Ding;  X. M. Dou;  G. W. Zha;  H. Q. Ni;  Z. C. Niu;  H. J. Zhu;  D. S. Jiang;  C. L. Zhao;  B. Q. Sun
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High efficient GaN-based laser diodes with tunnel junction 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 4, 页码: 043508
Authors:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
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Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Authors:  Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
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Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states 期刊论文
Journal of Applied Physics, 2011, 卷号: 109, 期号: 11, 页码: 113540
Authors:  Zhou, X.L.;  Chen, Y.H.;  Ye, X.L.;  Xu, Bo;  Wang, Z.G.;  Zhou, X. L.(zhouxl06@semi.ac.cn)
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Ground State  Photoluminescence  Quantum Efficiency  Semiconductor Quantum Dots  
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 卷号: 43, 期号: 48, 页码: Art. No. 485102
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Jia CH (Jia C. H.);  Ye XL (Ye X. L.);  Xu B (Xu Bo);  Wang ZG (Wang Z. G.);  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouxl06@semi.ac.cn
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Dependence  Spectra  
Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 卷号: 43, 期号: 29, 页码: Art. No. 295401
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Liu JQ (Liu J. Q.);  Jia CH (Jia C. H.);  Zhou GY (Zhou G. Y.);  Ye XL (Ye X. L.);  Xu B (Xu Bo);  Wang ZG (Wang Z. G.)
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Carrier Relaxation  States  Superlattices  Confinement  Laser  
Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 42, 期号: 9, 页码: 2455-2459
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Liu JQ (Liu J. Q.);  Xu B (Xu B.);  Ye XL (Ye X. L.);  Wang ZG (Wang Z. G.)
Adobe PDF(527Kb)  |  Favorite  |  View/Download：1109/453  |  Submit date：2010/09/07
Quantum Dots  Temperature Dependent  Photoluminescence  Surface Localized Centers  
能级填充对量子阱光学性质的影响 期刊论文
物理学报, 2004, 卷号: 53, 期号: 12, 页码: 4334-4340
Authors:  朱莉;  郑厚植;  谭平恒;  周霞;  姬扬;  杨富华;  李桂荣;  曾宇昕
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