| Different annealing temperature suitable for different Mg doped P-GaN | |
| S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang; P. Chen; J.J. Zhu; Z.S. Liu; X. Li; W. Liu; L.Q. Zhang; H. Long; M. Li | |
| 2017 | |
| Source Publication | Superlattices and Microstructures
 |
| Volume | 104Issue:2017Pages:63-68 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2018-07-11 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28768 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | S.T. Liu,J. Yang,D.G. Zhao,et al. Different annealing temperature suitable for different Mg doped P-GaN[J]. Superlattices and Microstructures,2017,104(2017):63-68. |
| APA | S.T. Liu.,J. Yang.,D.G. Zhao.,D.S. Jiang.,F. Liang.,...&M. Li.(2017).Different annealing temperature suitable for different Mg doped P-GaN.Superlattices and Microstructures,104(2017),63-68. |
| MLA | S.T. Liu,et al."Different annealing temperature suitable for different Mg doped P-GaN".Superlattices and Microstructures 104.2017(2017):63-68. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Different annealing （1153KB） | 限制开放 | License | Application Full Text | |||
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