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The compensation role of deep defects in the electric properties of lightly Si-doped GaN 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 773, 页码: 1182-1186
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   M. Li
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Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes 期刊论文
Applied Physics B, 2019, 卷号: 125, 页码: 235
Authors:  J. Yang ;   D. G. Zhao ;   J. J. Zhu ;   Z. S. Liu ;   D. S. Jiang ;   P. Chen ;   F. Liang ;   S. T. Liu ;   Y. Xing
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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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Silicon-on-insulator-based adiabatic splitter with simultaneous tapering of velocity and coupling 期刊论文
Opt Lett., 2013, 卷号: 38, 期号: 13, 页码: 2221
Authors:  Xing J, Xiong K, Xu H, Li Z, Xiao X, Yu J, Yu Y.
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Nonblocking 4×4 silicon electro-optic switch matrix with push-pull drive 期刊论文
OPTICS LETTERS, 2013, 卷号: 38, 期号: 19, 页码: 3926
Authors:  Xing J, Li Z, Zhou P, Xiao X, Yu J, Yu Y.
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Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy 期刊论文
PHYSICA B-CONDENSED MATTER, 2010, 卷号: 405, 期号: 16, 页码: 3433-3435
Authors:  Zhao CW (Zhao C. W.);  Xing YM (Xing Y. M.);  Yu JZ (Yu J. Z.);  Han GQ (Han G. Q.)
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Si/ge Heterostructures  Strain  High-resolution Transmission Electron  Microscopy  
第一性原理研究Mg,Si和Mn共掺GaN 期刊论文
物理学报, 2009, 卷号: 58, 期号: 1, 页码: 450-458
Authors:  邢海英;  范广涵;  章勇;  赵德刚
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Mn掺杂GaN电子结构和光学性质研究 期刊论文
物理学报, 2008, 卷号: 57, 期号: 10, 页码: 6513-6519
Authors:  邢海英;  范广涵;  赵德刚;  何苗;  章勇;  周天明
Adobe PDF(437Kb)  |  Favorite  |  View/Download：1082/390  |  Submit date：2010/11/23