| Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 | |
| J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; W. Liu; F. Liang; X. Li; S.T. Liu; L.Q. Zhang; H. Yang | |
| 2017 | |
| Source Publication | Superlattices and Microstructures
 |
| Volume | 102Issue:2017Pages:35-39 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2018-11-30 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28787 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | J. Yang,D.G. Zhao,D.S. Jiang,et al. Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3[J]. Superlattices and Microstructures,2017,102(2017):35-39. |
| APA | J. Yang.,D.G. Zhao.,D.S. Jiang.,P. Chen.,J.J. Zhu.,...&H. Yang.(2017).Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3.Superlattices and Microstructures,102(2017),35-39. |
| MLA | J. Yang,et al."Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3".Superlattices and Microstructures 102.2017(2017):35-39. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Increasing the indiu（763KB） | 限制开放 | License | Application Full Text | |||
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