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Valley Zeeman splitting of monolayer MoS 2 probed by low-field magnetic circular dichroism spectroscopy at room temperature 期刊论文
Applied Physics Letters, 2018, 卷号: 112, 期号: 15, 页码: 153105
Authors:  Y. J. Wu;   C. Shen;   Q. H. Tan;   J. Shi;   X. F. Liu;   Z. H. Wu;   J. Zhang;   P. H. Tan;   H. Z. Zheng
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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors:  J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li;  J. Yang;  J. J. Zhu;  Z. S. Liu;  X. J. Li;  W. Liu;  X. Li;  F. Liang;  J. P. Liu;  B. S. Zhang;  H. Yang
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Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102
Authors:  Z. Fu;  Z. G. Yin;  X. W. Zhang;  N. F. Chen;  Y. J. Zhao;  Y. M. Bai;  D. Y. Zhao;  H. F. Zhang;  Y. D. Yuan;  Y. N. Chen;  J. L. Wu;  J. B. You
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Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B=MgO Injectors with Different MgO Growth Processes 期刊论文
PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 054027
Authors:  P. Barate;  S. H. Liang;  T. T. Zhang;  J. Frougier;  B. Xu;  P. Schieffer;  M. Vidal;  H. Jaffrès;  B. Lépine;  S. Tricot;  F. Cadiz;  T. Garandel;  J. M. George;  T. Amand;  X. Devaux;  M. Hehn;  S. Mangin;  B. Tao;  X. F. Han;  Z. G. Wang;  X. Marie;  Y. Lu;  P. Renucci
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Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  W. Liu;  X. Li;  F. Liang;  S. T. Liu;  L. Q. Zhang;  H. Yang
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Different annealing temperature suitable for different Mg doped P-GaN 期刊论文
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
Authors:  S.T. Liu;  J. Yang;  D.G. Zhao;  D.S. Jiang;  F. Liang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  X. Li;  W. Liu;  L.Q. Zhang;  H. Long;  M. Li
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Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  W. Liu;  F. Liang;  X. Li;  S.T. Liu;  L.Q. Zhang;  H. Yang
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Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors 期刊论文
Journal of Applied Physics, 2016, 卷号: 119, 期号: 10, 页码: 105304
Authors:  Y. F. Lao;  A. G. U. Perera;  H. L. Wang;  J. H. Zhao;  Y. J. Jin;  D. H. Zhang
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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  X. Li;  S. T. Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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