| High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system | |
| Yin, Haibo; Wang, Xiaoliang; Ran, Junxue; Hu, Guoxin; Zhang, Lu; Xiao, Hongling; Li, Jing; Li, Jinmin; Yin, H.(hbyin@semi.ac.cn) | |
| 2011 | |
| Source Publication | Journal of Semiconductors
 |
| ISSN | 16744926 |
| Volume | 32Issue:3Pages:33002 |
| Abstract | A homemade7×2 inch MOCVD system is presented. With this system, high quality GaN epitaxial layers, InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown. The non-uniformity of undoped GaN epitaxial layers is as low as2.86%. Using the LED structural epitaxial layers, blue LED chips with area of350×350μm2 were fabricated. Under20 mA injection current, the optical output power of the blue LED is8.62 mW.?2011 Chinese Institute of Electronics. |
| metadata_83 | 半导体材料科学中心 |
| Keyword | Epitaxial Growth Gallium Nitride |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2012-06-14 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23041 |
| Collection | 半导体材料科学中心 |
| Corresponding Author | Yin, H.(hbyin@semi.ac.cn) |
| Recommended Citation GB/T 7714 | Yin, Haibo,Wang, Xiaoliang,Ran, Junxue,et al. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J]. Journal of Semiconductors,2011,32(3):33002. |
| APA | Yin, Haibo.,Wang, Xiaoliang.,Ran, Junxue.,Hu, Guoxin.,Zhang, Lu.,...&Yin, H..(2011).High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system.Journal of Semiconductors,32(3),33002. |
| MLA | Yin, Haibo,et al."High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system".Journal of Semiconductors 32.3(2011):33002. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012114.pdf（1040KB） | 限制开放 | License | Application Full Text | |||
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