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Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(308Kb)  |  收藏  |  浏览/下载：1837/508  |  提交时间：2010/03/09
Zinc Oxide  X-ray Diffraction  Defects  Single Crystal  
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Shen, WJ;  Duan, Y;  Wang, J;  Wang, QY;  Zeng, YP;  Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)  |  收藏  |  浏览/下载：1673/615  |  提交时间：2010/03/29
Zno  Mocvd  Thermal Annealing  Photoluminescence  X-ray Diffraction  Atomic Force Microscopy  Pulsed-laser Deposition  Thin-films  Photoluminescence  Mechanisms  Epitaxy  Cvd  Si  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1384/268  |  提交时间：2010/11/15
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1246/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1603/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li JM;  Sun GS;  Zhu SR;  Wang L;  Luo MC;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1229/247  |  提交时间：2010/11/15
X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Low-temperature Growth  Films  
In situ annealing during the growth of relaxed SiGe 会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:  Li DZ;  Huang CJ;  Cheng BW;  Wang HJ;  Yu Z;  Zhang CH;  Yu JZ;  Wang QM;  Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)  |  收藏  |  浏览/下载：1146/204  |  提交时间：2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition  Sige  Refractive High Energy Electron Diffraction  Tansmission Electron Microscopy  Double Crystal X-ray Diffraction  Mobility 2-dimensional Electron  Critical Thickness  Strained Layers  Ge  Relaxation  Epilayers  Si1-xgex  Gesi/si  Gases  
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Sun XL;  Wang YY;  Yang H;  Li JB;  Zheng LX;  Xu DP;  Wang ZG;  Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
Adobe PDF(206Kb)  |  收藏  |  浏览/下载：1477/311  |  提交时间：2010/11/15
Metalorganic Chemical Vapor Deposition  Cubic Gan  Hexagonal Phase Content  4-circle X-ray Double Crystal Diffraction  Molecular-beam Epitaxy  Gallium Nitride  Thin-films  Silicon  Gaas  
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Yuan HR;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Wang D;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(302Kb)  |  收藏  |  浏览/下载：1410/179  |  提交时间：2010/10/29
Algan/gan Heterostructures  In-doping  2deg  Electron Sheet Density  X-ray Diffraction  Etching  Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mobility  Growth  Films  
Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Zhuang QD;  Li JM;  Zeng YP;  Pan L;  Chen YH;  Kong MY;  Lin LY;  Zhuang QD Chinese Acad Sci Inst Semicond Novel Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)  |  收藏  |  浏览/下载：1358/321  |  提交时间：2010/11/15
InGaas Gaas Quantum Dots  Infrared Absorption  Self-organization  X-ray-diffraction  Islands  Transitions