SEMI OpenIR

Browse/Search Results:  1-10 of 21 Help

Selected(0)Clear Items/Page:    Sort:
Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 9, 页码: 4982-4988
Authors:  Lu Y;  Cong GW;  Liu XL;  Lu DC;  Zhu QS;  Wang XH;  Wu JJ;  Wang ZG;  Lu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yuanlu@semi.ac.cn
Adobe PDF(512Kb)  |  Favorite  |  View/Download:1309/447  |  Submit date:2010/03/09
Chemical-vapor-deposition  
Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 85, 期号: 23, 页码: 5562-5564
Authors:  Lu, Y;  Cong, GW;  Liu, XL;  Lu, DC;  Wang, ZG;  Wu, MF;  Lu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yuanlu@semi.ac.cn
Adobe PDF(63Kb)  |  Favorite  |  View/Download:1120/370  |  Submit date:2010/03/17
Stress  
Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 263, 期号: 1-4, 页码: 4-11
Authors:  Lu Y;  Liu XL;  Wang XH;  Lu DC;  Li DB;  Han XX;  Cong GW;  Wang ZG;  Lu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yuanlu@red.semi.ac.cn
Adobe PDF(444Kb)  |  Favorite  |  View/Download:1531/701  |  Submit date:2010/03/09
Substrates  
Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 1, 页码: 316-319
Authors:  Chen Z;  Lu DC;  Liu XL;  Wang XH;  Han PD;  Wang D;  Yuan HR;  Wang ZG;  Li GH;  Fang ZL;  Chen Z,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(62Kb)  |  Favorite  |  View/Download:984/369  |  Submit date:2010/08/12
Mg-doped Gan  Gallium Nitride  Phase Epitaxy  Substrate  Layer  
The growth morphologies of GaN layer on Si(111) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Authors:  Lu YA;  Liu XL;  Lu DC;  Yuan HR;  Hu GQ;  Wang XH;  Wang ZG;  Duan XF;  Lu DC,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(313Kb)  |  Favorite  |  View/Download:1183/483  |  Submit date:2010/08/12
Si(111) Substrate  Heteroepitaxy  Metalorganic Chemical Vapor Deposition  Gan  Light-emitting-diodes  Chemical-vapor-deposition  Nucleation Layers  Buffer Layer  Silicon  Sapphire  Nitride  Epitaxy  Stress  Strain  
The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells 期刊论文
JOURNAL OF LUMINESCENCE, 2002, 卷号: 99, 期号: 1, 页码: 35-38
Authors:  Chen Z;  Lu DC;  Wang XH;  Liu XL;  Yuan HR;  Han PD;  Wang D;  Wang ZG;  Li GH;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(93Kb)  |  Favorite  |  View/Download:1218/566  |  Submit date:2010/08/12
Photoluminescence  Excitation Transfer Mechanism  Gan  Ingan  Mocvd  Ingan Single  Emission  Polarization  
A geometrical model of GaN morphology in initial growth stage 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 1, 页码: 115-120
Authors:  Yuan HR;  Chen Z;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(143Kb)  |  Favorite  |  View/Download:911/334  |  Submit date:2010/08/12
Computer Simulation  Crystal Morphology  Atomic Force Microscopy  Nitrides  Ain Buffer Layer  Sapphire  
Statistical investigation on morphology development of gallium nitride in initial growth stage 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 1, 页码: 77-84
Authors:  Yuan HR;  Lu DC;  Liu XL;  Chen Z;  Han P;  Wang XH;  Wang D;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat & Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(274Kb)  |  Favorite  |  View/Download:957/254  |  Submit date:2010/08/12
Atomic Force Microscopy  Crystal Morphology  Organic Vapor Phase Epitaxy  Nitrides  Chemical-vapor-deposition  Ain Buffer Layer  Gan  Sapphire  Aln  Epitaxy  Movpe  
Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 234, 期号: 1, 页码: 145-152
Authors:  Lu DC;  Duan SK;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(147Kb)  |  Favorite  |  View/Download:805/243  |  Submit date:2010/08/12
Computer Simulation  Molecular Vapor Phase Epitaxy  Nitrides  Semiconducting Quaternary Alloys  Chemical-vapor-deposition  Quaternary Alloys  Phase Epitaxy  Gan  Alingan  
Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 1-3, 页码: 77-84
Authors:  Lu Y;  Liu XL;  Lu DC;  Yuan HR;  Chen Z;  Fan TW;  Li YF;  Han PD;  Wang XH;  Wang D;  Wang ZG;  Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(278Kb)  |  Favorite  |  View/Download:1123/359  |  Submit date:2010/08/12
Substrates  Heteroepitaxy  Metalorganic Chemical Vapor Deposition  Gallium Compounds  Nitrides  Intermediate Layer  Epitaxial-growth  Silicon  Sapphire  Film