SEMI OpenIR

Browse/Search Results:  1-10 of 34 Help

Selected(0)Clear Items/Page:    Sort:
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 3, 页码: Article no.33301
Authors:  Sun GS;  Liu XF;  Wu HL;  Yan GG;  Dong L;  Zheng L;  Zhao WS;  Wang L;  Zeng YP;  Li XG;  Wang ZG;  Sun, GS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. gshsun@red.semi.ac.cn
Adobe PDF(262Kb)  |  Favorite  |  View/Download:1311/320  |  Submit date:2011/07/05
4h-sic  Raman Scattering  Lopc Modes  Transport Properties  Silicon-carbide  Light  Gap  
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
Authors:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  Favorite  |  View/Download:1119/274  |  Submit date:2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
Authors:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  Favorite  |  View/Download:1366/307  |  Submit date:2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane 期刊论文
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2008, 卷号: 17, 期号: 2, 页码: 453-461
Authors:  Zhou, W;  Yang, JL;  Sun, GS;  Liu, XF;  Yang, FH;  Li, JM;  Zhou, W, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: jlyang@semi.ac.cn
Adobe PDF(750Kb)  |  Favorite  |  View/Download:1039/423  |  Submit date:2010/03/08
Bulge Test  Fracture Property  Microelectromechanical Systems (Mems)  Silicon Carbide (Sic) Thin Films  Weibull Distribution Function  
Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 7, 页码: Art. No. 072110
Authors:  Zhang BL;  Cai FF;  Sun GS;  Fan HB;  Zhang PF;  Wei HY;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangbaoli@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(248Kb)  |  Favorite  |  View/Download:1220/412  |  Submit date:2010/03/08
Molecular-beam Epitaxy  
Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 92, 期号: 19, 页码: Art. No. 192107
Authors:  Fan, HB;  Sun, GS;  Yang, SY;  Zhang, PF;  Zhang, RQ;  Wei, HY;  Jiao, CM;  Liu, XL;  Chen, YH;  Zhu, QS;  Wang, ZG;  Fan, HB, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hbfan@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(315Kb)  |  Favorite  |  View/Download:1357/490  |  Submit date:2010/03/08
Zno Films  Growth  Diodes  Gan  
Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 6, 页码: 2269-2272
Authors:  Zhao, YM;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, WS;  Wang, L;  Li, JM;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: ymzhao@semi.ac.cn
Adobe PDF(4488Kb)  |  Favorite  |  View/Download:927/232  |  Submit date:2010/03/08
Chemical-vapor-deposition  
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Ji, G;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, YM;  Wang, L;  Zhao, WS;  Zeng, YP;  Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)  |  Favorite  |  View/Download:1028/225  |  Submit date:2010/03/09
Simulation and fabrication of the SiC-based clamped-clamped filter 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Zhao, YM;  Ning, J;  Sun, GS;  Liu, XF;  Wang, L;  Ji, G;  Zhao, WS;  Li, JM;  Yang, FH;  Zhao, YM, Chinese Acad Sci, Inst Semicond, State Key Labs Transducer Technol, Beijing 100083, Peoples R China.
Adobe PDF(4954Kb)  |  Favorite  |  View/Download:1031/274  |  Submit date:2010/03/09
Micromechanical Resonators  Frequency  
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 24, 页码: Art. No. 242107
Authors:  Zhang BL;  Sun GS;  Guo Y;  Zhang PF;  Zhang RQ;  Fan HB;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang BL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: zhangbaoli@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(256Kb)  |  Favorite  |  View/Download:1088/338  |  Submit date:2010/03/08
Conduction Bands  Iii-v Semiconductors  Indium Compounds  Interface States  Semiconductor Heterojunctions  Silicon Compounds  Valence Bands  Wide Band Gap Semiconductors  X-ray Photoelectron Spectra