Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F

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	Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F
	Wei, XC; Zhao, YW; Dong, ZY; Li, JM; Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	Conference on Solid State Lighting and Solar Energy Technologies
会议录名称	SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
页码	6841: F8410-F8410
会议日期	NOV 12-14, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-7016-4
部门归属	[wei, xuecheng; zhao, youwen; dong, zhiyuan; li, jinmin] chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Hall effect, photoluminescence spectroscopy (PL), mass spectroscopy and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed seeded chemical vapor transport method. Enhancement of n-type electrical conduction and increase of nitrogen concentration are observed of the ZnO samples after high temperature annealing. The results suggest that vacancy is dominant native defect in the ZnO material. These phenomena are explained by a generation of shallow donor defect and suppression of deep level defects in ZnO after the annealing.
关键词	Zinc Oxide X-ray Diffraction Defects Single Crystal
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7818
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wei, XC,Zhao, YW,Dong, ZY,et al. Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6841: F8410-F8410.

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