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光纤布拉格光栅传感解调中的寻峰算法 期刊论文
中国激光, 2008, 卷号: 35, 期号: 6, 页码: 893-897
Authors:  朱浩瀚;  秦海琨;  张敏;  赖淑蓉;  廖延彪
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偏振不灵敏半导体光放大器的制作方法 专利
专利类型: 发明, 申请日期: 2005-05-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王书荣;  王圩;  刘志宏;  张瑞英;  朱洪亮;  王鲁蜂
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渐变带隙的铟镓砷材料的制备方法 专利
专利类型: 发明, 申请日期: 2005-01-19, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王书荣;  王圩;  朱洪亮;  张瑞英;  边静
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MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 260, 期号: 3-4, 页码: 464-468
Authors:  Wang SR;  Wang W;  Zhu HL;  Zhao LJ;  Zhang RY;  Zhou F;  Shu HY;  Wang RF;  Wang, SR, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
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Graded-strain  
Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells 期刊论文
OPTICAL ENGINEERING, 2004, 卷号: 43, 期号: 9, 页码: 1955-1956
Authors:  Wang, SR;  Zhu, HL;  Wang, BJ;  Liu, ZH;  Ding, Y;  Zhao, LJ;  Zhou, F;  Wang, W;  Wang, SR, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. 电子邮箱地址: shrw@red.semi.ac.cn
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Semiconductor Optical Amplifier  
Wide-band polarization-insensitive high-output-power semiconductor optical amplifier based on thin tensile-strained bulk InGaAs 期刊论文
CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 2, 页码: 310-312
Authors:  Wang, SR;  Liu, ZH;  Wang, W;  Zhu, HL;  Zhang, RY;  Zhou, F;  Wang, LF;  Ding, Y;  Wang, SR, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. 电子邮箱地址: shrw@red.semi.ac.cn
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Gain  
A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 卷号: 43, 期号: 4A, 页码: 1330-1331
Authors:  Wang, SR;  Wang, W;  Liu, ZH;  Zhu, HL;  Zhang, RY;  Zha, LJ;  Zhou, F;  Ding, Y;  Wang, LF;  Wang, SR, Chinese Acad Sci, Inst Semicond, Ctr Optoelect Res & Dev, Beijing 100083, Peoples R China.
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Low-pressure Metalorganic Vapor-phase Epiyaxy (Lp-movpe)  
Si衬底上无坑洞3C-SiC的外延生长研究 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 2, 页码: 135-138
Authors:  孙国胜;  王雷;  罗木昌;  赵万顺;  朱世荣;  李晋闽;  曾一平;  林兰英
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GSMBE生长SiGe/Si材料的原位掺杂控制技术 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 2, 页码: 142-144
Authors:  黄大定;  刘超;  李建平;  高斐;  孙殿照;  朱世荣;  孔梅影
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气源分子束外延生长锗硅异质结双极晶体管材料掺杂方法 专利
专利类型: 发明, 申请日期: 2002-10-16, 公开日期: 2009-06-04, 2009-06-11
Inventors:  黄大定;  李建平;  高斐;  林燕霞;  孙殿照;  刘金平;  朱世荣;  孔梅影
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