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无权访问的条目 学位论文
Authors:  张凡凡
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1 Gbps directed optical decoder based on two cascaded microring resonators 期刊论文
OPTICS LETTERS, 2014, 卷号: 39, 期号: 14, 页码: 4255-4258
Authors:  Chen, QS;  Zhang, FF;  Zhang, L;  Tian, YH;  Zhou, P;  Ding, JF;  Yang, L
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Demonstration of a 3-bit optical digital-to-analog converter based on silicon microring resonators 期刊论文
OPTICS LETTERS, 2014, 卷号: 39, 期号: 19, 页码: 5736-5739
Authors:  Yang, L;  Ding, JF;  Chen, QS;  Zhou, P;  Zhang, FF;  Zhang, L
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Universal method for constructing N-port non-blocking optical router based on 2 x 2 optical switch for photonic networks-on-chip 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 10, 页码: 12614-12627
Authors:  Chen, QS;  Zhang, FF;  Ji, RQ;  Zhang, L;  Yang, L
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利用p型掺杂的硅衬底生长高结晶质量氧化锌纳米棒的方法 专利
专利类型: 发明, 申请日期: 2009-09-23, 公开日期: 4007
Inventors:  蔡芳芳;  范海波;  张攀峰;  刘祥林 
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Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 7, 页码: Art. No. 072110
Authors:  Zhang BL;  Cai FF;  Sun GS;  Fan HB;  Zhang PF;  Wei HY;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangbaoli@semi.ac.cn;  qszhu@semi.ac.cn
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Molecular-beam Epitaxy  
A 5GHz low power WLAN transceiver SiGe RFIC for personal communication terminal applications 会议论文
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Long Beach, CA, JAN 10-12, 2007
Authors:  Yan, J (Yan, Jun);  Xu, QM (Xu, Qiming);  Zhang, XL (Zhang, Xuelian);  Hu, XQ (Hu, Xueqing);  Xu, H (Xu, Hua);  Shi, Y (Shi, Yin);  Dai, FF (Dai, Fa Foster);  Yan, J, Chinese Acad Sci, Inst Semicond, SemiRF Lab, ISCAS, Beijing 100083, Peoples R China.
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Personal Communication Terminal  Sige Rfic  Wlan 802.11a Transceiver  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
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Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Li JM;  Sun GS;  Zhu SR;  Wang L;  Luo MC;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
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X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Low-temperature Growth  Films  
Epitaxial growth of SiC on complex substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 811-815
Authors:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(196Kb)  |  Favorite  |  View/Download:787/266  |  Submit date:2010/08/12
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films