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Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  Favorite  |  View/Download:1272/385  |  Submit date:2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 399-403
Authors:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelectron,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(191Kb)  |  Favorite  |  View/Download:874/277  |  Submit date:2010/08/12
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films