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在硅衬底上生长的氮化镓薄膜结构及其生长方法 专利
专利类型: 发明, 申请日期: 2009-08-26, 公开日期: 4005
Inventors:  王晓亮;  罗卫军;  郭伦春;  肖红领;  李建平;  李晋闽 
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采用全光学膜体系的垂直结构发光二极管制作方法 专利
专利类型: 发明, 申请日期: 2009-01-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  伊晓燕;  王良臣;  王国宏;  李晋闽
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光学复合膜作电极的GaN功率型LED的制备方法 专利
专利类型: 发明, 申请日期: 2009-01-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  李晋闽;  王晓东;  王国宏;  王良臣;  杨富华
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Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 017301
Authors:  Guo LC;  Wang XL;  Xiao HL;  Ran JX;  Wang CM;  Ma ZY;  Luo WJ;  Wang ZG;  Guo LC Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: lcguo@semi.ac.cn
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Content Algan/gan Heterostructures  Chemical-vapor-deposition  Field-effect Transistors  Al-content  Algan/aln/gan Heterostructures  Hemt Structures  Phase Epitaxy  Sapphire  Gas  Densities  
一种氮化镓基小芯片LED阵列结构及制备方法 专利
专利类型: 发明, 申请日期: 2008-10-15, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王立彬;  伊晓燕;  刘志强;  陈宇;  郭德博;  王良臣
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GaN基功率型LED的N型欧姆接触电极的制备方法 专利
专利类型: 发明, 申请日期: 2008-05-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈宇;  王良臣;  伊晓燕;  郭金霞
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Color filter-less technology of LED back light for LCD-TV - art. no. 68410G 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Fan, MN;  Liang, M;  Guo, DB;  Yang, FH;  Wang, LC;  Wang, GH;  Li, JM;  Fan, MN, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Lighting, Beijing 100083, Peoples R China.
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Led Back Light Unit  Color Filter-less  Emitting Phosphors  Liquid Crystal Display  
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Authors:  Guo, LC;  Wang, XL;  Wang, CM;  Mao, HL;  Ran, JX;  Luo, WJ;  Wang, XY;  Wang, BZ;  Fang, CB;  Hu, GX;  Guo, LC, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: lcguo@semi.ac.cn
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Gan  Hemt  2deg  Mobility  Polarization  
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Authors:  Luo, WJ;  Wang, XL;  Xiao, HL;  Wang, CM;  Ran, JX;  Guo, LC;  Li, JP;  Liu, HX;  Chen, YL;  Yang, FH;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: yuntianbb@hotmail.com
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Algan/gan  High Electron Mobility Transistor (Hemt)  Si (111)  
Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Fan, JM;  Wang, LC;  Guo, JX;  Yi, XY;  Liu, ZQ;  Wang, GH;  Li, JM;  Fan, JM, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
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Gan-based Led  Micro-leds  Light Extraction Efficiency  Ray Tracing  Flip-chip