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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Electroabsorption-modulated DFB laser integrated with dual-waveguide spot-size converter - art. no. 60200N
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Hou, LP
;
Wang, W
;
Zhu, HL
;
Wang, BJ
;
Zhou, F
;
Hou, LP, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(258Kb)
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浏览/下载:1676/444
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提交时间:2010/03/29
Dfb Laser Diode
Electroabsorption Modulator
Spot-size Converters
Selective Area Growth
Quantum Well Intermixing
Dual-core Structure
Monolithic Integration
Wavelength-selectable DFB laser with wide gain bandwidth realized in nonidentical quantum well - art. no. 60200W
会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:
Xie, HY
;
Pan, JQ
;
Yang, H
;
Zhao, LJ
;
Zhu, HL
;
Wang, LF
;
Cui, AH
;
Wang, W
;
Xie, HY, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)
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浏览/下载:1621/404
  |  
提交时间:2010/03/29
Wide Gain Bandwidth
Dfb Laser
Non-identical Quantum Well
Cwdm
Superluminescent Diodes
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
;
Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
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浏览/下载:1653/495
  |  
提交时间:2010/10/29
Ganas
Sio2 Encapsulation
Rapid-thermal-annealing
Nitrogen Reorganization
Molecular-beam Epitaxy
Optical-properties
Mu-m
Lasing of CdSSe quantum dots in glass spherical microcavity
会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:
Lu SL
;
Jia R
;
Jiang DS
;
Li SS
;
Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(91Kb)
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浏览/下载:1184/267
  |  
提交时间:2010/11/15
Optical study on the coupled GaAsSb/GaAs double quantum wells
会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:
Jiang DS
;
Liang XG
;
Chang K
;
Bian LF
;
Sun BQ
;
Wang JB
;
Johnson S
;
Zhang Y
;
Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
Adobe PDF(215Kb)
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浏览/下载:1404/272
  |  
提交时间:2010/10/29
Lasers
Gain
Gaas
High-speed DFB laser and EMLs
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Wei W
;
Liu GL
;
Zhu HL
;
Zhang JY
;
Wei W Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1294/0
  |  
提交时间:2010/10/29
Modulator
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Cao X
;
Zeng YP
;
Cui LJ
;
Kong MY
;
Pan LA
;
Wang BQ
;
Zhu ZP
;
Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(106Kb)
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  |  
浏览/下载:1543/426
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Mobility
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Sun BQ
;
Jiang DS
;
Pan Z
;
Li LH
;
Wu RH
;
Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)
  |  
收藏
  |  
浏览/下载:1151/261
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Semiconducting Iiiv Materials
Luminescence
Gaasn
Optical transitions in GaNAs/GaAs single quantum well
会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:
Luo XD
;
Xu ZY
;
Sun BQ
;
Pan Z
;
Li LH
;
Lin YW
;
Ge WK
;
Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(314Kb)
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收藏
  |  
浏览/下载:1195/244
  |  
提交时间:2010/10/29
Ganas
Photoluminescence
Band Offset
Band Bowing Coefficient
Localized Exciton
Molecular-beam Epitaxy
Alloys
Temperature
Gaasn
Tunable MQW-DBR lasers using selective area growth
会议论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086, SHANGHAI, PEOPLES R CHINA, MAY 08-11, 2000
作者:
Liu GL
;
Wang W
;
Zhang JY
;
Chen WX
;
Xu GY
;
Zhang BJ
;
Zhou F
;
Wang XJ
;
Zhu HL
;
Liu GL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(199Kb)
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收藏
  |  
浏览/下载:1559/418
  |  
提交时间:2010/10/29
Selective Area Growth
Multi-quantum-well
Distributed Bragg Reflector Laser
Mocvd
Tunable Laser
Epitaxy