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InGaN/GaN LED载流子泄漏的研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  黄洋
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基于目标特征尺寸的可视化被动测距系统 期刊论文
光学精密工程, 2018, 卷号: 26, 期号: 1, 页码: 245-252
Authors:  杨金宝;  杨晨;  刘建国;  祝宁华;  于丽娟;  刘亚超
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特征尺寸  被动测距  可视化  
Broadband multi-wavelength Brillouin lasers with an operating wavelength range of 1500–1600 nm generated by four-wave mixing in a dual wavelength Brillouin fiber laser cavity 期刊论文
LASER PHYSICS LETTERS, 2018, 卷号: 15, 期号: 5, 页码: 055103
Authors:  Q Li ;   Z X Jia ;   H Z Weng ;   Z R Li ;   Y D Yang ;   J L Xiao ;   S W Chen ;   Y Z Huang ;   W P Qin ;   G S Qin
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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors:  J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
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用于微波光子信息处理及光通信的光滤波器研究 学位论文
, 北京: 中国科学院大学, 2017
Authors:  赵海洋
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可重构光分插复用器  微波光子学  可调谐光滤波器  微环谐振器  
无权访问的条目 期刊论文
Authors:  杨冠卿;  张世著;  徐波;  陈涌海;  王占国
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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li;  J. Yang;  J. J. Zhu;  Z. S. Liu;  X. J. Li;  W. Liu;  X. Li;  F. Liang;  J. P. Liu;  B. S. Zhang;  H. Yang
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Spin-polarized charge trapping cell based on a topological insulator quantum dot 期刊论文
RSC Advances, 2017, 卷号: 7, 页码: 30963–30969
Authors:  Zhenhua Wu;  Liangzhong Lin;  Wen Yang;  D. Zhang;  C. Shen;  W. Lou;  H. Yin;  Kai Chang
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Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes 期刊论文
NATURE COMMUNICATIONS, 2017, 卷号: 8, 页码: 15640
Authors:  Liuqi Zhang;  Xiaolei Yang;  Qi Jiang;  Pengyang Wang;  Zhigang Yin;  Xingwang Zhang;  Hairen Tan;  Yang (Michael) Yang;  Mingyang Wei;  Brandon R. Sutherland;  Edward H. Sargent;  Jingbi You
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Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  W. Liu;  X. Li;  F. Liang;  S. T. Liu;  L. Q. Zhang;  H. Yang
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