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Title: Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 4, 页码: 044204
Authors:  Cui, X;  Zhang, C;  Liang, S;  Zhu, HL;  Hou, LP
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电吸收调制激光器和模斑转换器的集成方法 专利
专利类型: 发明, 申请日期: 2007-02-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:  侯廉平;  王圩;  朱洪亮;  周帆
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利用量子阱混杂作模斑转换分布反馈布拉格激光器的方法 专利
专利类型: 发明, 申请日期: 2007-02-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:  侯廉平;  王圩;  朱洪亮
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Electroabsorption modulator integrated with buried-ridge-stripe dual-core spot-size converter by quantum-well intermixing 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 卷号: 19, 期号: 9-12, 页码: 756-758
Authors:  Hou, LP (Hou, Lianping);  Zhu, HL (Zhu, Hongliang);  Wang, W (Wang, Wei);  Hou, LP, Univ Bristol, Dept Elect & Elect Engn, Bristol BS8 1TR, Avon, England. 电子邮箱地址: LP.Hou@bristol.ac.uk
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Electroabsorption Modulator (Eam)  
Electroabsorption-Modulated DFB laser Integrated.With dual-core spot-size converters 期刊论文
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2007, 卷号: 25, 期号: 8, 页码: 2213-2218
Authors:  Hou, LP (Hou, Lianping);  Ren, Z (Ren, Zhong);  Yu, SY (Yu, Siyuan);  Zhu, HL (Zhu, Hongliang);  Wang, W (Wang, Wei);  Hou, LP, Univ Bristol, Dept Elect & Elect Engn, Bristol BS8 1TR, Avon, England. 电子邮箱地址: LP.Hou@bristol.ac.uk;  Zhong.Ren@bristol.ac.uk;  S.Yu@bristol.ac.uk;  zhuhl@red.semi.ac.cn;  wwang@red.semi.ac.cn
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Distributed Feedback Laser Diode (Dfb Ld)  
光放大器电吸收调制器和模斑转换器的单片集成的方法 专利
专利类型: 发明, 申请日期: 2006-11-01, 公开日期: 2009-06-04, 2009-06-11
Inventors:  侯廉平;  王圩;  朱洪亮;  周帆
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激光器-电吸收调制器-模斑转换器单片集成的制作方法 专利
专利类型: 发明, 申请日期: 2006-06-21, 公开日期: 2009-06-04, 2009-06-11
Inventors:  侯廉平;  王圩;  朱洪亮;  周帆;  王鲁峰;  边静
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一次外延形成半导体激光器和模斑转换器的方法 专利
专利类型: 发明, 申请日期: 2006-04-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  侯廉平;  王圩;  朱洪亮
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双波导技术制作半导体激光器和模斑转换器的方法 专利
专利类型: 发明, 申请日期: 2006-04-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  侯廉平;  王圩
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AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 卷号: 39, 期号: 11, 页码: 2330-2334
Authors:  Feng W;  Pan JQ;  Yang H;  Hou LP;  Zhou F;  Zhao LJ;  Zhu HL;  Wang W;  Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wfeng@semi.ac.cn
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Vapor-phase Epitaxy  Buried-heterostructure Lasers  Bandgap Energy Control  Quantum-well Lasers  Pressure Movpe  Area Growth  Ingaalas  Layers