SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure
Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP; Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
2001
Conference Name11th International Conference on Molecular Beam Epitaxy (MBE-XI)
Source PublicationJOURNAL OF CRYSTAL GROWTH, 227
Pages127-131
Conference DateSEP 11-15, 2000
Conference PlaceBEIJING, PEOPLES R CHINA
Publication PlacePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
PublisherELSEVIER SCIENCE BV
ISSN0022-0248
AbstractThe single delta -doped InGaAs/AlGaAs pseudomorphic HEMT structure materials were grown by molecular beam epitaxy. The photoluminescence spectra of the materials were studied. There are two peaks in the photoluminescence spectra of the materials, corresponding to two sub energy levels of InGaAs quantum well. The ratio of the two peak's intensity was used as criterion to optimize the layer structures of the materials. The material with optimized layer ;tructures exhibits the 77 It mobility and two-dimensional electron gas density of 16 500 cm(2)/Vs and 2.58 x 10(12) cm(-2) respectively, and the 300 K mobility and two-dimensional electron gas density of 6800 cm(2)/Vs and 2.55 x 10(12) cm(-2) respectively. The pseudomorphic HEMT devices with gate length of 0.2 mum were fabricated using this material. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china
KeywordMolecular Beam Epitaxy Mobility
Funding OrganizationChina Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
Subject Area半导体材料
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/14929
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorCao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Cao X,Zeng YP,Cui LJ,et al. Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:127-131.
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